Junction area dependent performance of graphene/silicon based self-powered Schottky photodiodes

Fidan, Mehmet; Ünverdi, Özhan; Çelebi, Cem

doi:10.1016/j.sna.2021.112829

Cited by 15 publications

(14 citation statements)

References 24 publications

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“…It shows an EQE around 75% for λ < 1100 nm, i.e., when photoconversion occurs mainly in Si, followed by a sudden drop to 0.03% when the energy of the incident light is below the band gap of Si. For λ > 1100 nm, photoexcitation occurs mainly in graphene and the EQE, as reported elsewhere. ,, We highlight that the obtained external quantum efficiency is consistent with the highest value reported in the literature over the investigated spectral range. ,,− …”

Section: Results and Discussionsupporting

confidence: 90%

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Graphene–Silicon Device for Visible and Infrared Photodetection

Pelella

Faella

Luongo³

et al. 2021

ACS Appl. Mater. Interfaces

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The fabrication of a graphene-silicon (Gr-Si) junction involves the formation of a parallel metalinsulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device. In this work, the transfer of graphene onto a patterned ntype Si substrate, covered by Si3N4, produces a Gr-Si device in which the parallel MIS consists of a Gr-Si3N4-Si structure surrounding the Gr-Si junction. The Gr-Si device exhibits rectifying behavior with a rectification ratio up to 10 4 . The investigation of its temperature behavior is necessary to accurately estimate the Schottky barrier height at zero bias, 𝜑 𝑏0 = 0.24 𝑒𝑉, the effective Richardson's constant, 𝐴 * = 7 × 10 −10 𝐴𝐾 −2 𝑐𝑚 −2 , and the diode ideality factor. n=2.66 of the Gr-Si junction. The device is operated as a photodetector in both photocurrent and photovoltage mode in the visible and infrared (IR) spectral regions. A responsivity up to 350 mA/W and external quantum efficiency (EQE) up to 75% is achieved in the 500-1200 nm wavelength range. A decrease of responsivity to 0.4 mA/W and EQE to 0.03% is observed above 1200 nm, that is in the IR region beyond the silicon optical bandgap, in which photoexcitation is driven by graphene. Finally, a model based on two back-to-back diodes, one for the Gr-Si junction the other for the Gr-Si3N4-Si MIS structure, is proposed to explain the electrical behavior of the Gr-Si device.

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Section: Results and Discussionsupporting

confidence: 90%

“…Due to the low incident power (950 μW/cm 2 ), possible thermal effects can be excluded. Figure c,d shows that under illumination, the device generates both a current and a voltage, i.e., it can be operated in a self-powered mode, consistent with other works in the literature. − …”

Section: Results and Discussionsupporting

confidence: 85%

Graphene–Silicon Device for Visible and Infrared Photodetection

Pelella

Faella

Luongo³

et al. 2021

ACS Appl. Mater. Interfaces

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“…As a consequence of enhanced charge separation efficiency, I pc and R increase proportionally with the size of the active junction area. 22 The blue shift observed in the maximum spectral response wavelength for G/n-Si elements in the array is due to a thin Si layer. Compared to bulk Si, the absorption of light is limited to shorter wavelengths in the case of thin Si layer as discussed in Ref.…”

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confidence: 95%

“…and NEP is the incident power required to obtain a signal-to-noise ratio of 1 at a bandwidth of 1 Hz and is calculated by 22,26 NEP ¼…”

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confidence: 99%

Graphene/SOI-based self-powered Schottky barrier photodiode array

Yanılmaz

Fidan

Ünverdi

et al. 2022

Applied Physics Letters

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We have fabricated a four-element graphene/silicon on insulator (SOI) based Schottky barrier photodiode array (PDA) and investigated its optoelectronic device performance. In our device design, monolayer graphene is utilized as a common electrode on a lithographically defined linear array of n-type Si channels on a SOI substrate. As revealed by wavelength resolved photocurrent spectroscopy measurements, each element in the PDA structure exhibited a maximum spectral responsivity of around 0.1 A/W under a self-powered operational mode. Time-dependent photocurrent spectroscopy measurements showed excellent photocurrent reversibility of the device with ∼1.36 and ∼1.27 μs rise time and fall time, respectively. Each element in the array displayed an average specific detectivity of around 1.3 × 1012 Jones and a substantially small noise equivalent power of ∼0.14 pW/Hz−1/2. The study presented here is expected to offer exciting opportunities in terms of high value-added graphene/Si based PDA device applications such as multi-wavelength light measurement, level metering, high-speed photometry, and position/motion detection.

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“…This also infers that graphene heterojunctions would have rectifying behaviour in general. Examples of graphene heterojunction involving semiconductor material such as GaN, GaAs, and Si to make optical devices would be rectifying in nature [37][38][39][40][41]. Despite the numerous advantages of graphene/semiconductor heterojunction devices, they are susceptible to changes such as defects at the heterojunction.…”

Section: Introductionmentioning

confidence: 99%

Improvement of Porous GaN-Based UV Photodetector with Graphene Cladding

et al. 2021

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This work presents the role of graphene in improving the performance of a porous GaN-based UV photodetector. The porous GaN-based photodetector, with a mean pore diameter of 35 nm, possessed higher UV sensitivity, about 95% better compared to that of the as-received (non-porous) photodetector. In addition, it exhibits a lower magnitude of leakage current at dark ambient, about 70.9 μA, compared to that of the as-received photodetector with 13.7 mA. However, it is also highly resistive in nature due to the corresponding electrochemical process selectively dissolute doped regions. Herein, two types of graphene, derived from CVD and the electrochemical exfoliation (EC) process, were cladded onto the porous GaN region. The formation of a graphene/porous GaN interface, as evident from the decrease in average distance between defects as determined from Raman spectroscopy, infers better charge accumulation and conductance, which significantly improved UV sensing. While the leakage current shows little improvement, the UV sensitivity was greatly enhanced, by about 460% and 420% for CVD and EC cladded samples. The slight difference between types of graphene was attributed to the coverage area on porous GaN, where CVD-grown graphene tends to be continuous while EC-graphene relies on aggregation to form films.

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Junction area dependent performance of graphene/silicon based self-powered Schottky photodiodes

Cited by 15 publications

References 24 publications

Graphene–Silicon Device for Visible and Infrared Photodetection

Graphene–Silicon Device for Visible and Infrared Photodetection

Graphene/SOI-based self-powered Schottky barrier photodiode array

Improvement of Porous GaN-Based UV Photodetector with Graphene Cladding

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