JEDEC-Qualified Highly Reliable 22nm FD-SOI Embedded MRAM For Low-Power Industrial-Grade, and Extended Performance Towards Automotive-Grade-1 Applications

Naik, V. B.; Yamane, K.; Lee, T.Y.; Kwon, Jae Hyun; Ren, Chao; Lim, J. H.; Chung, N. L.; Behin‐Aein, Behtash; Hau, L. Y.; Zeng, D.; Otani, Y.; Chiang, C.J.; Huang, Yuanyuan; Pu, Liang; Jang, Seonhee; Neo, W. P.; Dixit, Hemant; Goh, Stephen; Toh, Eng-Huat; Ling, T.; Hwang, J.; Ting, J. W.; Löw, Robert; Zhang, L.; Lee, C.G.; Balasankaran, N.; Tan, Funan; Gan, K. W.; Yoon, Hee-Sun; Congedo, G.; Mueller, Johannes; Pfefferling, B.; Kallensee, O.; Vogel, Andreas; Kriegerstein, V.; Merbeth, T.; Seet, C. S.; Ong, Suan Ee; Xu, Jiazhu; Wong, J.; You, Yuan; Woo, S. T.; Chan, T. H.; Quek, Elgin; Siah, S. Y.

doi:10.1109/iedm13553.2020.9371935

Cited by 31 publications

(13 citation statements)

References 2 publications

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“…STT-MRAM technology is considered to be the most viable solution owing to its attractive properties such as CMOS process compatibility, high operation speeds, superior endurance, and negligible leakage, thus, making it an ideal solution for low power, embedded electronics [1][2][3]. Significant resources have been invested in the past decade at major foundries and tool suppliers to optimize this technology for last-level cache (LLC) memory, microcontroller units (MCU), eFLASH, and automotive applications [2,[4][5][6][7][8][9][10][11][12]. Despite these excellent advancements, some challenges remain.…”

Section: Introductionmentioning

confidence: 99%

A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications

et al. 2021

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Spin-transfer torque magnetoresistive random access memory (STT-MRAM) technology is considered to be the most promising nonvolatile memory (NVM) solution for high-speed and low power applications. Dual MgO-based composite free layers (FL) have driven the development of STT-MRAMs over the past decade, achieving data retention of 10 years at the cost of higher write power consumption. In addition, the need for tunnel magnetoresistance (TMR)-based read schemes limits the flexibility in materials beyond the typical CoFeB/MgO interfaces. In this study, we propose a novel spacerless FL stack comprised of CoFeB alloyed with heavy metals such as tungsten (W) which allows effective modulation of the magnet properties (Ms, Hk) while retaining compatibility with MgO layers. The addition of W results favours a delayed crystallization process, in turn enabling higher thermal budgets up to 180 min at 400 °C. The presence of tungsten reduces the total FL magnetization (Ms) but simultaneously increasing its temperature dependence, thus, enabling a dynamic write current reduction of ~15% at 2 ns pulse widths. Reliable operation is demonstrated with a WER of 1 ppm and endurance >1010 cycles. These results pave the way for alternative designs of STT-MRAMs for low power electronics.

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Section: Introductionmentioning

confidence: 99%

A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications

et al. 2021

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“…We have shown that the crystallisation of PtMn thin films into the anisotropic L1 0 phase was achieved by annealing at temperatures up to, and above, BEOL conditions enabling median blocking temperatures above 200 • C. This is well in excess of the temperatures required to meet auto-grade-1 applications (−40 • C to 150 • C) [31]. A significant increase in anisotropy was observed with increasing annealing temperature, especially in samples with a Pt seed layer where the value of K AF = 2.97 • 10 7 erg cm −3 .…”

Section: Discussionmentioning

confidence: 92%

Anisotropy constant of antiferromagnetic Pt₅₀Mn₅₀

Frost,

Carpenter,

Vallejo-Fernandez

2024

J. Phys. D: Appl. Phys.

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We have measured the anisotropy constant of polycrystalline PtMn thin films deposited on different seed layer materials: Pt, Ru and Nb. Values as high as (2.5 ± 0.5) · 107 erg/cm3 were achieved for samples deposited on Pt. The films can be crystallised into the antiferromagnetic, face-centred-tetragonal phase on Ru and Pt seed layers at annealing temperatures compatible with back-end-of-line conditions of up to 400 ◦C for one to three hours. Additionally these antiferromagnetic layers, 8 nm thick, are highly thermally stable with median blocking temperatures above 200 ◦C. The effect of diffusion on the stoichiometry of the PtMn layers is discussed with regards to the different seed layer materials.

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“…It possesses a simple structure and is directly compatible with CMOS back-end of line processes. It has shown to be promising for several applications, for example in stand-alone memories and in the embedded automotive and Internet of Things fields, and is expected to replace charge-based devices in frame buffer memory and slow SRAM [ 2 , 3 , 4 , 5 ]. Moreover, MRAM devices have shown to be interesting for cryogenic applications, especially for employment in quantum computing systems [ 6 , 7 , 8 ].…”

Section: Introductionmentioning

confidence: 99%

Finite Element Approach for the Simulation of Modern MRAM Devices

et al. 2023

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Because of their nonvolatile nature and simple structure, the interest in MRAM devices has been steadily growing in recent years. Reliable simulation tools, capable of handling complex geometries composed of multiple materials, provide valuable help in improving the design of MRAM cells. In this work, we describe a solver based on the finite element implementation of the Landau–Lifshitz–Gilbert equation coupled to the spin and charge drift-diffusion formalism. The torque acting in all layers from different contributions is computed from a unified expression. In consequence of the versatility of the finite element implementation, the solver is applied to switching simulations of recently proposed structures based on spin-transfer torque, with a double reference layer or an elongated and composite free layer, and of a structure combining spin-transfer and spin-orbit torques.

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JEDEC-Qualified Highly Reliable 22nm FD-SOI Embedded MRAM For Low-Power Industrial-Grade, and Extended Performance Towards Automotive-Grade-1 Applications

Cited by 31 publications

References 2 publications

A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications

A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications

Anisotropy constant of antiferromagnetic Pt₅₀Mn₅₀

Finite Element Approach for the Simulation of Modern MRAM Devices

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JEDEC-Qualified Highly Reliable 22nm FD-SOI Embedded MRAM For Low-Power Industrial-Grade, and Extended Performance Towards Automotive-Grade-1 Applications

Cited by 31 publications

References 2 publications

A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications

A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications

Anisotropy constant of antiferromagnetic Pt50Mn50

Finite Element Approach for the Simulation of Modern MRAM Devices

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Anisotropy constant of antiferromagnetic Pt₅₀Mn₅₀