J–V Characteristic of p–n Structure Formed on n-GaAs Surface by Ar+ Ion Beam

Mikoushkin, V. M.; Kalinovskii, V. S.; Kontrosh, E. V.; Makarevskaya, E.A.

doi:10.1134/s1063782619140136

Cited by 5 publications

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“…The bulk signal occurred to be rather weak due to attenuation in the upper layer. Figure 2 also shows the presence of interstitial/metallic Ga (Ga-int) in the p-layer at binding energy E B = 18.55 eV discussed elsewhere [2,3]. A kink at binding energy E B = 20.2 eV was revealed also in the doubly differentiated spectrum (not shown here), thus confirming the presence of the bulk n-GaAs contribution.…”

Section: Resultssupporting

confidence: 70%

“…In addition, the effect of a p-n structure formation on the n-GaAs surface by low energy Ar + ions has been observed. J-V characteristics of the created p-n structure revealed the diode effect [3]. The attractiveness of the studied approach for possible applications is that the p-n junction can be formed in a high vacuum locally with the lateral resolution determined by the ion beam diameter without using the wet lithography.…”

Section: Introductionmentioning

confidence: 98%

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The Diagram of p–n Junction Formed on the n-GaAs Surface by 1.5 keV Ar+ Ion Beam

et al. 2020

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The core-level and valence band electronic structure of the n-GaAs (100) has been studied by synchrotron-based high-resolution photoelectron spectroscopy after irradiation by an Ar + ion beam with energy E i = 1500 eV and fluence Q = 1*10 15 ions/cm 2 . Conversion of the conductivity type of the surface layer and formation of a p-n structure has been observed. The p-surface layer thickness (d ~ 5.0 nm) and band structure were experimentally determined from the Ga3d photoelectron spectrum by separation and analysis of the low intense n-type bulk contribution from deeper layers. A band diagram of the p-n junction formed on the n-GaAs-surface by Ar + ion bombardment was reconstructed. The p-n junction proved to be unexpectedly narrow compared to the extended tail of the implanted ion depth distribution.

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Section: Resultssupporting

confidence: 70%

Section: Introductionmentioning

confidence: 98%