Effect of ion irradiation on GaAs core-level electron binding energies and band structure

Mikoushkin, V. M.; Makarevskaya, E.A.; Brzhezinskaya, M. M.

doi:10.1016/j.apsusc.2020.148273

Cited by 9 publications

(2 citation statements)

References 28 publications

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“…The density and pressure of the gas within the bubbles are relevant factors to consider in future investigations. Our work using MS (bottom-up method) adds new knowledge to previous relevant works that have demonstrated the effect of ion irradiation (top-down method) on semiconductor electronic structure [ 65 ].…”

Section: Discussionmentioning

confidence: 95%

Synergistic Effect of He for the Fabrication of Ne and Ar Gas-Charged Silicon Thin Films as Solid Targets for Spectroscopic Studies

Fernández,

Godinho,

Ávila

et al. 2024

Nanomaterials

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Sputtering of silicon in a He magnetron discharge (MS) has been reported as a bottom-up procedure to obtain He-charged silicon films (i.e., He nanobubbles encapsulated in a silicon matrix). The incorporation of heavier noble gases is demonstrated in this work with a synergistic effect, producing increased Ne and Ar incorporations when using He–Ne and He–Ar gas mixtures in the MS process. Microstructural and chemical characterizations are reported using ion beam analysis (IBA) and scanning and transmission electron microscopies (SEM and TEM). In addition to gas incorporation, He promotes the formation of larger nanobubbles. In the case of Ne, high-resolution X-ray photoelectron and absorption spectroscopies (XPS and XAS) are reported, with remarkable dependence of the Ne 1s photoemission and the Ne K-edge absorption on the nanobubble’s size and composition. The gas (He, Ne and Ar)-charged thin films are proposed as “solid” targets for the characterization of spectroscopic properties of noble gases in a confined state without the need for cryogenics or high-pressure anvils devices. Also, their use as targets for nuclear reaction studies is foreseen.

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Section: Discussionmentioning

confidence: 95%

Synergistic Effect of He for the Fabrication of Ne and Ar Gas-Charged Silicon Thin Films as Solid Targets for Spectroscopic Studies

Fernández,

Godinho,

Ávila

et al. 2024

Nanomaterials

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“…Based on the above reviews, irradiation by high-energy radiation particles degrade the physical properties of irradiated semiconductor materials. The irradiation of GaAs-based material by high-energy radiation particles can produce lattice defects in the form of vacancies, defect clusters, and dislocations [ 44 , 45 , 46 , 47 , 48 ]. The main effect of these lattice defects in GaAs-based material is the creation of recombination centers known to reduce the carrier minority lifetime and increase dark current.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation

et al. 2022

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A systematic investigation of the changes in structural and optical properties of a semi-insulating GaAs (001) wafer under high-energy electron irradiation is presented in this study. GaAs wafers were exposed to high-energy electron beams under different energies of 10, 15, and 20 MeV for absorbed doses ranging from 0–2.0 MGy. The study showed high-energy electron bombardments caused roughening on the surface of the irradiated GaAs samples. At the maximum delivered energy of 20 MeV electrons, the observed root mean square (RMS) roughness increased from 5.993 (0.0 MGy) to 14.944 nm (2.0 MGy). The increased RMS roughness with radiation doses was consistent with an increased hole size of incident electrons on the GaAs surface from 0.015 (0.5 MGy) to 0.066 nm (2.0 MGy) at 20 MeV electrons. Interestingly, roughness on the surface of irradiated GaAs samples affected an increase in material wettability. The study also observed the changes in bandgap energy of GaAs samples after irradiation with 10, 15, and 20 MeV electrons. The band gap energy was found in the 1.364 to 1.397 eV range, and the observed intense UV-VIS spectra were higher than in non-irradiated samples. The results revealed an increase of light absorption in irradiated GaAs samples to be higher than in original-based samples.

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Photovoltaic effect on the n-GaAs surface irradiated with low-energy Ar+ ions

et al. 2021

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Effect of ion irradiation on GaAs core-level electron binding energies and band structure

Cited by 9 publications

References 28 publications

Synergistic Effect of He for the Fabrication of Ne and Ar Gas-Charged Silicon Thin Films as Solid Targets for Spectroscopic Studies

Synergistic Effect of He for the Fabrication of Ne and Ar Gas-Charged Silicon Thin Films as Solid Targets for Spectroscopic Studies

Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation

Photovoltaic effect on the n-GaAs surface irradiated with low-energy Ar+ ions

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