2023 IEEE International Symposium on Circuits and Systems (ISCAS) 2023
DOI: 10.1109/iscas46773.2023.10182138
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IVATS: A Leakage Reduction Technique Based on Input Vector Analysis and Transistor Stacking in CMOS Circuits

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“…While these transistors are much faster than the standard or high threshold (SVT or HVT) devices, they suffer from subthreshold leakage several orders of magnitude higher than that of an SVT device, leading to excessive leakage power. However, in the case of multiple serially connected cutoff transistors, the so-called ''stackeffect'' [88], [89] reduces this leakage to a tolerable level.…”
Section: B Fully-associative Tag Array (Fasta)mentioning
confidence: 99%
“…While these transistors are much faster than the standard or high threshold (SVT or HVT) devices, they suffer from subthreshold leakage several orders of magnitude higher than that of an SVT device, leading to excessive leakage power. However, in the case of multiple serially connected cutoff transistors, the so-called ''stackeffect'' [88], [89] reduces this leakage to a tolerable level.…”
Section: B Fully-associative Tag Array (Fasta)mentioning
confidence: 99%