ITO thin films deposited at low temperatures using a kinetic energy controlled sputter-deposition technique

Hoshi, Yoichi; Kiyomura, T.

doi:10.1016/s0040-6090(02)00170-0

Cited by 56 publications

(24 citation statements)

References 8 publications

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“…Low-energy magnetron sputtering methods have also been developed to reduce the damages to organic layers. [84][85][86] There have been several successes in demonstrating OPV and OLED devices with sputtered top ITO electrodes; however, the optical and electronic properties for these ITO films with low energy deposition techniques are quite different from commercial ITO electrodes in addition to a very slow deposition process with film growth rates as low as 0.1 Å∕s, 9,87 which need to be further studied and improved for their large-scale applications.…”

Section: Transparent Conductive Oxidesmentioning

confidence: 99%

Transparent electrodes for organic optoelectronic devices: a review

et al. 2014

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Abstract. Transparent conductive electrodes are one of the essential components for organic optoelectronic devices, including photovoltaic cells and light-emitting diodes. Indium-tin oxide (ITO) is the most common transparent electrode in these devices due to its excellent optical and electrical properties. However, the manufacturing of ITO film requires precious raw materials and expensive processes, which limits their compatibility with mass production of large-area, low-cost devices. The optical/electrical properties of ITO are strongly dependent on the deposition processes and treatment conditions, whereas its brittleness and the potential damage to underlying films during deposition also present challenges for its use in flexible devices. Recently, several other transparent conductive materials, which have various degrees of success relative to commercial applications have been developed to address these issues. Starting from the basic properties of ITO and the effect of various ITO surface modification methods, here we review four different groups of materials, doped metal oxides, thin metals, conducting polymers, and nanomaterials (including carbon nanotubes, graphene, and metal nanowires), that have been reported as transparent electrodes in organic optoelectronic materials. Particular emphasis is given to their optical/electrical and other material properties, deposition techniques, and applications in organic optoelectronic devices.

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Section: Transparent Conductive Oxidesmentioning

confidence: 99%

Transparent electrodes for organic optoelectronic devices: a review

et al. 2014

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“…Open Access OJMetal By using the standard formula [23], the values of strain (є), dislocation density (δ) and number of crystallites (N) were calculated.…”

Section: G Saroja Et Almentioning

confidence: 99%

Optical Studies of Ag<sub>2</sub>O Thin Film Prepared by Electron Beam Evaporation Method

Saroja¹,

Vasu²,

Nagarani³

2013

OJMetal

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Silver oxide (Ag 2 O) thin films were deposited on glass substrates using electron beam gun evaporation techniques without oxygen atmosphere. The deposited films were post annealed at 100˚C, 150˚C, and 200˚C, respectively. The surface morphologies, structural and optical properties at different annealing temperatures were studied using scanning electron microscopy (SEM), X-ray diffraction (XRD), and ultra-violet-visible spectroscopy. The XRD results show that the intensity of (200)

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“…On the other hand, the resistivity of polycrystalline doped ZnO thin films has been found to increase drastically when used in hightemperature oxidizing environments; the stability of resistivity was strongly dependent on the film deposition temperature [4][5][6]. Since the fabrication of LCDs frequently requires thin-film deposition at a temperature below approximately 200 °C [7,8], the resistivity stability of doped ZnO thin films prepared at low temperatures must be investigated in activated oxidizing environments such as an atmosphere with high relative humidity. In this paper, the stability of transparent conducting AZO and GZO thin films in a high humidity environment is investigated for the purpose of finding substitutes for ITO thin films used in transparent electrode applications.…”

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confidence: 99%

Effect of thickness on the stability of transparent conducting impurity‐doped ZnO thin films in a high humidity environment

Minami

Miyata²,

Ohtani

et al. 2006

Physica Rapid Research Ltrs

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Transparent conducting indium-tin-oxide (ITO) thin films with a thickness in the range from approximately 15 to 450 nm are in practical use as transparent electrode in liquid crystal display (LCD) applications. However, because of the high cost and scarcity of indium, transparent conducting impurity-doped ZnO such as Al-and Ga-doped ZnO (AZO and GZO) has recently attracted much attention as a promising alternative material [1,2]. In addition to the cost advantage of AZO, zinc being abundant and nontoxic, AZO thin films prepared on glass substrates have recently been reported with a low resistivity on the order of 10 -5 Ω cm [3], which is comparable to the lowest resistivity obtainable for ITO thin films. On the other hand, the resistivity of polycrystalline doped ZnO thin films has been found to increase drastically when used in hightemperature oxidizing environments; the stability of resistivity was strongly dependent on the film deposition temperature [4][5][6]. Since the fabrication of LCDs frequently requires thin-film deposition at a temperature below approximately 200 °C [7,8], the resistivity stability of doped ZnO thin films prepared at low temperatures must be investigated in activated oxidizing environments such as an atmosphere with high relative humidity. In this paper, the stability of transparent conducting AZO and GZO thin films in a high humidity environment is investigated for the purpose of finding substitutes for ITO thin films used in transparent electrode applications.Transparent conducting AZO and GZO thin films were prepared on glass (OA-10, Nippon Electric Glass Co., Ltd.) at a substrate temperature below 200 °C by pulsed laser deposition (PLD), dc or rf magnetron sputtering (MSP) and vacuum arc plasma evaporation (VAPE) methods [9][10][11]. The as-deposited AZO and GZO films used in the stability tests were prepared with a thickness in the range from 20 to 200 nm at a substrate temperature in the range from 68 to 200 °C; the obtained resistivity is on the order of 10 -3 to 10 -4 Ω cm. For the purpose of comparing the stability, non-doped ZnO, non-doped In 2 O 3 and ITO thin films were also prepared in the same range of thicknesses and substrate temperatures as the doped ZnO films described above. The electrical properties described in the following were always measured in air at room temperature by the van der Pauw method.The resistivity of all non-doped and doped ZnO thin films prepared under the deposition conditions described above was found to increase with exposure time up to 1000 h in the high humidity environment (air at 90% relative humidity and 60 °C) tests; in contrast, all non-dopedThe resistivity of transparent conducting Al-and Ga-doped ZnO (AZO and GZO) thin films prepared with a thickness in the range from 20 to 200 nm on glass substrates at a temperature below 200 °C was found to increase with exposure time when tested in a high humidity environment (air at 90% relative humidity and 60 °C). The resistivity stability (resistivity increase) was considerably affected by the ...

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ITO thin films deposited at low temperatures using a kinetic energy controlled sputter-deposition technique

Cited by 56 publications

References 8 publications

Transparent electrodes for organic optoelectronic devices: a review

Transparent electrodes for organic optoelectronic devices: a review

Optical Studies of Ag<sub>2</sub>O Thin Film Prepared by Electron Beam Evaporation Method

Effect of thickness on the stability of transparent conducting impurity‐doped ZnO thin films in a high humidity environment

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ITO thin films deposited at low temperatures using a kinetic energy controlled sputter-deposition technique

Cited by 56 publications

References 8 publications

Transparent electrodes for organic optoelectronic devices: a review

Transparent electrodes for organic optoelectronic devices: a review

Optical Studies of Ag&lt;sub&gt;2&lt;/sub&gt;O Thin Film Prepared by Electron Beam Evaporation Method

Effect of thickness on the stability of transparent conducting impurity‐doped ZnO thin films in a high humidity environment

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Optical Studies of Ag<sub>2</sub>O Thin Film Prepared by Electron Beam Evaporation Method