ITO/Au/ITO multilayer thin films for transparent conducting electrode applications

Kim, Y.S.; Park, J.H.; Choi, Dong-Whan; Jang, Ho‐Sun; Lee, J.H.; Park, H.J.; Choi, Jeongyong; Ju, Dianxing; Lee, J.Y.; Kim, Daeil

doi:10.1016/j.apsusc.2007.07.080

Cited by 103 publications

(45 citation statements)

References 15 publications

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“…As-deposited ITO films (a) did not exhibit any diffraction peaks, while the IAI films (b) showed diffraction peaks corresponding to Au (1 1 1) and In 2 O 3 (2 2 2) planes. This means that the Au intermediated layer is very effective in crystallizing ITO films [10]. When the annealing temperature reached 150-450 • C, the intensities of the In 2 O 3 (2 2 2) peak in films (c), (d), and (e) increased and the full width at half maximum (FWHM) of the In 2 O 3 (2 2 2) peak decreased due to crystallization.…”

Section: Resultsmentioning

confidence: 95%

Characterization of low pressure annealed ITO/Au/ITO films prepared by reactive magnetron sputtering

Kim

2010

Journal of Alloys and Compounds

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Section: Resultsmentioning

confidence: 95%

Characterization of low pressure annealed ITO/Au/ITO films prepared by reactive magnetron sputtering

Kim

2010

Journal of Alloys and Compounds

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“…As the thickness of the metal layer increases, the transmittance decreases and reflection increases, as the film becomes a mirror [24]. Considering the effect of a metallic buffer layer, Kim et al [25] reported that an Au buffer, of 10 nm thick, had an optical transmission of 71%, at 550 nm. In Fig.…”

Section: Methodsmentioning

confidence: 98%

The characteristics of transparent conducting Al-doped zinc oxide thin films deposited on polymer substrates

Kao

Hsu

Chen

et al. 2012

J Mater Sci: Mater Electron

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Al-doped zinc oxide (AZO) transparent, conductive thin films were deposited on inexpensive polyethylene terephthalate substrates, using radio frequency (rf) magnetron sputtering, with an AZO ceramic target (the Al 2 O 3 content is approximately 2 wt%). This paper presents an effective method for the optimization of the parameters for the deposition process for AZO thin films with multiple performance characteristics, using the Taguchi method, combined with grey relational analysis.Using the Taguchi quality design concept, an L 9 orthogonal array was chosen for the experiments. The effects of various process parameters (rf power, substrate-to-target distance, substrate temperature and deposition time) on the electrical, structural, morphological and optical properties of AZO films were investigated. In the confirmation runs, using grey relational analysis, the electrical resistivity of the AZO films was found to have decreased from 5.0 9 10 -3 to 1.6 9 10 -3 X-cm and the optical transmittance was found to have increased from 74.39 to 79.40%. The results demonstrate that the Taguchi method combined with grey relational analysis is an economical way to obtain the multiple performance characteristics of AZO films with the fewest experimental data. Additionally, by applying an Al buffer layer, of thickness 10 nm, the results show that the electrical resistivity was 3.1 9 10 -4 X-cm and the average optical transmittance, in the visible part of the spectrum, was approximately 79.12%.

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“…Similarly, Y. Kim reported that 5 nm thick Au intermediate IMI films prepared with magnetron sputtering have better structural and optoelectrical properties than ITO single layer films [5].…”

Section: Introductionmentioning

confidence: 98%

ITO/Au/ITO multilayer thin films for transparent conducting electrode applications

Cited by 103 publications

References 15 publications

Characterization of low pressure annealed ITO/Au/ITO films prepared by reactive magnetron sputtering

Characterization of low pressure annealed ITO/Au/ITO films prepared by reactive magnetron sputtering

The characteristics of transparent conducting Al-doped zinc oxide thin films deposited on polymer substrates

Influence of CuSn thickness on the work function and optoelectrical properties of ZnO/CuSn/ZnO multilayer films

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