Influence of CuSn thickness on the work function and optoelectrical properties of ZnO/CuSn/ZnO multilayer films

Kim, Daeil

doi:10.1016/j.displa.2010.05.002

Cited by 15 publications

(7 citation statements)

References 15 publications

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“…Surface treatment or Annealing temperature Work function (eV) Reference ITO Ar + ion irradiation 4.2 [13] In 2 0 3 Annealed at 400 o C (Nitrogen atmosphere) 7.0 This study…”

Section: Filmmentioning

confidence: 99%

Effect of Annealing in a Nitrogen Atmosphere on the Properties of In2O3 Films Deposited with RF Magnetron Sputtering

Kong¹,

Kim²,

이영진³

et al. 2012

Korean. J. Mater. Res.

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In 2 O 3 films were deposited by RF magnetron sputtering on a glass substrate and then the effect of post deposition annealing in nitrogen atmosphere on the structural, optical and electrical properties of the films was investigated. After deposition, the annealing process was conducted for 30 minutes at 200 and 400 o C. XRD pattern analysis showed that the as deposited films were amorphous. When the annealing temperature reached 200-400 o C, the intensities of the In 2 O 3 (222) major peak increased and the full width at half maximum (FWHM) of the In 2 O 3 (222) peak decreased due to the crystallization. The films annealed at 400 o C showed a grain size of 28 nm, which was larger than that of the as deposited amorphous films. The optical transmittance in the visible wavelength region also increased, while the electrical sheet resistance decreased. In this study, the films annealed at 400 o C showed the highest optical transmittance of 76% and also showed the lowest sheet resistance of 89 Ω/□. The figure of merit reached a maximum of 7.2 × 10 −4 Ω −1 for the films annealed at 400 o C. The effect of the annealing on the work-function of In 2 O 3 films was considered. The work-function obtained from annealed films at 400 o C was 7.0eV. Thus, the annealed In 2 O 3 films are an alternative to ITO films for use as transparent anodes in OLEDs.

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“…Surface treatment or Annealing temperature Work function (eV) Reference ITO Ar + ion irradiation 4.2 [13] In 2 0 3 Annealed at 400 o C (Nitrogen atmosphere) 7.0 This study…”

Section: Filmmentioning

confidence: 99%

Effect of Annealing in a Nitrogen Atmosphere on the Properties of In2O3 Films Deposited with RF Magnetron Sputtering

Kong¹,

Kim²,

이영진³

et al. 2012

Korean. J. Mater. Res.

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“…In recent years, studies of transition metal oxides nanostructures have become important due to the different potential applications, such as solar cells (Sönmezoglu et al, 2014), gas sensors [1], optical devices [2], display windows [3], photocatalysts [4] and surface acoustic waveguides [5]. ZnO is a direct wide band gap (3.37 eV) semiconductor with a large excitonic binding energy (60 meV) at room temperature [6].…”

Section: Introductionmentioning

confidence: 99%

Controlled synthesis of nano-ZnO via hydro/solvothermal process and study of their optical properties

Moulahi

Sediri

2016

Optik

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“…Dielectric/metal/dielectric (D/M/D) multilayer thin film, whose primary purpose was to fabricate selective transparent thin films, is considered to be a choice with advantages [3,7,9]. Various high-performance D/M/D multilayers used as transparent conductive film or electrodes have been successfully fabricated such as SnO 2 /M/SnO 2 [10][11][12], aluminum-doped zinc oxide (AZO)/ M/AZO [13], ZnO/M/ZnO [14][15][16][17]. As to the advantages of high transparency in visible wavelengths and excellent room-temperature luminescence performance, ZnO thin film has great potential in liquid-crystal display, ultraviolet (UV) detector and light-emitting diode [18,19].…”

mentioning

confidence: 99%

“…Although the optical and electrical properties of ZnO thin film can be improved by adding or injecting onedimensional nanomaterials such as nanoparticles [20], nanowires [21,22] and nanorods [23], the complex preparation technology limits their applications. ZnO/M/ZnO multilayer thin film can effectively reduce the resistivity to improve the conductivity and performance of the film and has an important engineering application value [14][15][16][17]. Various ZnO/M/ZnO systems such as ZnO/ copper(Cu)-Sn/ZnO [14], ZnO/silver (Ag)/ZnO [15], ZnO/Cu/ ZnO [16,17] have been developed and studied.…”

mentioning

confidence: 99%

“…ZnO/M/ZnO multilayer thin film can effectively reduce the resistivity to improve the conductivity and performance of the film and has an important engineering application value [14][15][16][17]. Various ZnO/M/ZnO systems such as ZnO/ copper(Cu)-Sn/ZnO [14], ZnO/silver (Ag)/ZnO [15], ZnO/Cu/ ZnO [16,17] have been developed and studied. As typical conductive metals, both Cu and titanium (Ti) have excellent electrical conductivity.…”

mentioning

confidence: 99%

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Electrical and optical properties of metal‐sandwiched ZnO/Ti/Cu/Ti/ZnO transparent conductive thin film

Lin

Zhao

Jiang

et al. 2018

Micro & Nano Letters

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Metal-sandwiched zinc oxide (ZnO)/titanium (Ti)/copper (Cu)/Ti/ZnO thin film systems were fabricated using magnetron sputtering technology and then annealed using a rapid thermal annealing system at temperatures from 100 to 400°C. The influence of the Ti film thicknesses and annealing temperatures on the surface morphologies, sheet resistance and optical properties were studied. The surface morphologies change a little with the annealing temperature rises. The sheet resistances reduce with the Ti film thickness or annealing temperature increasing. Both the max transmittance and figure of merit reduce with the increase of Ti film thickness. The max transmittance increases with the temperature increasing from 100 to 300°C and then reduces. However, the figure of merit increases with the temperature increasing which indicates that the metal-sandwiched ZnO/Ti/Cu/Ti/ZnO thin film system annealed at 400°C has the optimal performance.

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Influence of CuSn thickness on the work function and optoelectrical properties of ZnO/CuSn/ZnO multilayer films

Cited by 15 publications

References 15 publications

Effect of Annealing in a Nitrogen Atmosphere on the Properties of In2O3 Films Deposited with RF Magnetron Sputtering

Effect of Annealing in a Nitrogen Atmosphere on the Properties of In2O3 Films Deposited with RF Magnetron Sputtering

Controlled synthesis of nano-ZnO via hydro/solvothermal process and study of their optical properties

Electrical and optical properties of metal‐sandwiched ZnO/Ti/Cu/Ti/ZnO transparent conductive thin film

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