Is this the time for a high-energy laser weapon program?

Kiel, David H.

doi:10.1117/1.oe.52.2.021008

Cited by 6 publications

(1 citation statement)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[3][4][5][6][7][8] In this case, the high power of a laser beam or long exposure time is necessary to induce thermal damage on the target surface in order to increase the temperature to the melting or vaporization point. In general, a hard-kill laser weapon requires 100 kW.…”

Section: Introductionmentioning

confidence: 99%

Thermal damages on the surface of a silicon wafer induced by a near-infrared laser

Choi

Jhang²

2014

Opt. Eng

View full text Add to dashboard Cite

Abstract. Laser-induced thermal damages of a silicon wafer surface subjected to continuous near-infrared laser irradiation were investigated. Silicon wafer specimens were illuminated by a continuous-wave fiber laser beam (1070-nm wavelength) with irradiances from 93 to 186 W∕cm 2 , and the surface morphology of each specimen was analyzed using optical microscopy. With increasing irradiance, straight cracks in the <110> direction appeared first, and partial melting and complete melting were subsequently observed. The mechanism of these laser-induced thermal damages in the silicon wafer surface was discussed with numerical analysis based on the heat transfer and thermoelasticity model. The irradiances initiating the cracking and melting were predicted by determining the irradiances in which the calculated thermal stress and temperature exceeded the corresponding limits of the fracture strength and melting point, respectively. These predictions agreed well with the experimental findings. Laser-induced thermal damages of the silicon wafer surface subjected to a continuous near-infrared laser irradiation were identified based on these investigations. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

show abstract