2001
DOI: 10.1016/s0168-9002(00)00931-1
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Irradiation-induced defects in CdTe and CdZnTe detectors

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Cited by 23 publications
(24 citation statements)
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“…Level T 1 with the activation energy of about 0.054 eV is assigned to shallow donor, originated from Indoped point defect, which has also been observed in CdTe:In and CdZnTe:In [17,18]. Trap levels T 2 , T 3 and T 4 with the activation energies 0.089 eV, 0.110 eV and 0.139 eV are recognized as shallow acceptors related to A-center and corresponding to first ionization energy of Cd-vacancy according to the theoretical calculations [18][19][20][21][22]. Trap T 5 with the activation energy 0.164 eV is also recognized as A-center [19].…”
Section: Resultsmentioning
confidence: 65%
“…Level T 1 with the activation energy of about 0.054 eV is assigned to shallow donor, originated from Indoped point defect, which has also been observed in CdTe:In and CdZnTe:In [17,18]. Trap levels T 2 , T 3 and T 4 with the activation energies 0.089 eV, 0.110 eV and 0.139 eV are recognized as shallow acceptors related to A-center and corresponding to first ionization energy of Cd-vacancy according to the theoretical calculations [18][19][20][21][22]. Trap T 5 with the activation energy 0.164 eV is also recognized as A-center [19].…”
Section: Resultsmentioning
confidence: 65%
“…This effect has been clearly demonstrated [14]. However, the calibration measurements indicated that the CZT detectors did not show any measurable degradation of the energy resolution after about 1 month of operation at ISIS, corresponding to a fast neutron flux of about 10 10 n cm À2 : Much larger fast neutron fluxes ð> 10 12 n cm À2 Þ are known to be required to provide significant deterioration of the detector response [25].…”
Section: Energy Calibrationmentioning
confidence: 84%
“…Due to its mechanical and physical properties the CdTe is widely used material. Therefore, in the recent years the CdTe sensors were subject of study of their basic characteristics, effects of different types of radiation (gamma, electrons, positrons, protons, neutrons) [1,2,3,4,5,6] etc. However the manufacturing technologies of CdTe crystals are continuously improving, with results in larger detectors with more uniform response and better radiation hardness.…”
Section: Introductionmentioning
confidence: 99%