Irradiation-induced chemical disordering in ceramics: The case of SiC

Koyanagi, Takaaki

doi:10.1016/j.jnucmat.2022.153766

Cited by 6 publications

(1 citation statement)

References 63 publications

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“…Interest in such studies is primarily due to the need to obtain new data on the radiation resistance of materials planned to be used as materials for nuclear energy, as well as to study the dynamics of their properties under the influence of radiation [1][2][3]. Moreover, over the past few years, studies related to the radiation resistance of various types of ceramics based on oxide or nitride compounds, which have several characteristics that allow them to be used in extreme conditions associated with high temperatures and high-dose radiation, have been of great interest [4,5]. One of the key properties of ceramic materials that allow them to be used as structural materials is their resistance to the accumulation of radiation damage and subsequent phase-structural transformations associated with the accumulation effects of structural distortions and deformation stresses in the damaged layer [6,7].…”

Section: Introductionmentioning

confidence: 99%

Study of the Influence of the Irradiation Flux Density on the Formation of a Defect Structure in AlN in the Case of the Effect of Overlapping of the Heavy Ion Motion Trajectories in the Near-Surface Layer

et al. 2023

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The aim of this paper is to test the previously stated hypothesis and several experimental facts about the effect of the ion flux or ion beam current under irradiation with heavy ions on the radiation damage formation in the ceramic near-surface layer and their concentration. The hypothesis is that, when considering the possibilities of using ion irradiation (usually with heavy ions) for radiation damage simulation at a given depth, comparable to neutron irradiation, it is necessary to consider the rate factor for the set of atomic displacements and their accumulation. Using the methods of X-ray diffraction analysis, Raman and UV–Vis spectroscopy, alongside photoluminescence, the mechanisms of defect formation in the damaged layer were studied by varying the current of the Xe23+ ion beam with an energy of 230 MeV. As a result of the experimental data obtained, it was found that, with the ion beam current elevation upon the irradiation of nitride ceramics (AlN) with heavy Xe23+ ions, structural changes have a pronounced dependence on the damage accumulation rate. At the same time, the variation of the ion beam current affects the main mechanisms of defect formation in the near-surface layer. It has been found that at high values of flux ions, the dominant mechanism in damage to the surface layer is the mechanism of the formation of vacancy defects associated with the replacement of nitrogen atoms by oxygen atoms, as well as the formation of ON–VAl complexes.

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