Abstract:The aim of this study is to investigate the structural transformations of erbium oxide (Er2O3) dielectric which can be used as a sensitive region in the new generation RadFET radiation sensors under a high gamma dose. The Er2O3 film was grown on n-type Si (100) by RF magnetron sputtering and film thickness was measured as 118 nm. The samples were irradiated by a 60 Co radioactive source with the doses of 1 kGy, 25 kGy, and 50 kGy. The crystal structure samples were analysed by the X-ray diffraction method. The… Show more
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