Iron Metalization of Fluorinated Organic Films:  A Combined X-ray Photoelectron Spectroscopy and Atomic Force Microscopy Study

Carlo, S. R.; Wagner, A.; Fairbrother, D. Howard

doi:10.1021/jp0009406

Cited by 40 publications

(39 citation statements)

References 48 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The situation is further clarified in the XPS spectrum of the same sample shown in Fig.2c. The C1s core level spectrum, fitted in a similar fashion as before, reveals a substantial signal of sp 3 hybridization [47][48][49] along with other carbon functionalities, such as C-N [50,51], C-OH [52,53], C=O [47,52,53], COOH/R [47,52,53], CF-C/C-CF n [54][55][56] as previously reported in the literature. The asymmetry factor on the graphitic peak is increased to 0.1, considerably higher than the as grown sample.…”

Section: Transferred Graphenementioning

confidence: 57%

The effect of downstream plasma treatments on graphene surfaces

Peltekis

Kumar

McEvoy

et al. 2012

Carbon

View full text Add to dashboard Cite

This paper reports on the effects of growth, transfer and annealing procedures on graphene grown by chemical vapour deposition. A combination of Raman spectroscopy, electrical measurements, atomic force microscopy, and x-ray photoemission spectroscopy allowed for the study of inherent characteristics and electronic structure of graphene films.Contributions from contaminants and surface inhomogeneities such as ripples were also examined. A new cleaning and reconstruction process for graphene, based on plasma treatments and annealing is presented, opening a new pathway for control over the surface chemistry of graphene films. The method has been successfully used on contacted graphene samples, demonstrating its potential for in-situ cleaning, passivation and interface engineering of graphene devices.

show abstract

Section: Transferred Graphenementioning

confidence: 57%

The effect of downstream plasma treatments on graphene surfaces

Peltekis

Kumar

McEvoy

et al. 2012

Carbon

View full text Add to dashboard Cite

show abstract

“…Recently, Carlo et al has shown that evaporated iron readily defluorinates a -CF 3 -terminated self-assembled monolayer. 25 Therefore, it maybe concluded from the literature that highly reactive metals can defluorinate fluoropolymers with relative ease, which may include Ta and Al. Further, sputtered-metal films, such as Cu, can cause much defluorination, with for example, FLARE 1.0, whereas when the metal is thermally evaporated little if no defluorination occurs.…”

Section: Methodsmentioning

confidence: 99%

Stability of fluorinated parylenes to oxygen reactive-ion etching under aluminum, aluminum oxide, and tantalum nitride overlayers

Senkevich

Wang

Fortin

et al. 2003

Journal of Elec Materi

View full text Add to dashboard Cite

A driving force in the semiconductor industry has been the reduction in feature size to increase the speed and functionality per unit area. As the minimum feature size has been reduced to the submicron regime, the benefit of further reduction of device size will be increasingly offset by the interconnect or resistance capacitance (RC) delay. 1 With the intensified search for ultra-low dielectric-constant materials ( < 2.2), fluorination of polymeric materials is an option to reduce the dielectric constant of hydrocarbon polymers while still retaining a dense dielectric. To be compatible with copper-damascene processing, the low-interlayer dielectric (ILD) must possess a robust interface with copper-diffusion barriers, adhesion layers, or dielectric liners, depending on the back end of the line-metallization scheme. The presence of fluorine in the ILD, however, presents reliability concerns as any fluorine instability might seriously undermine diffusion/adhesion liners and copper wires. The present work investigates the stability of two fluorinated-parylene polymers before and after oxygen reactive-ion etching (RIE) in contact with Al, Al 2 O 3 , and TaN X overlayers. It is important to understand the chemical interaction between the fluorinated ILD and the barrier overlayer because trench formation in Cu-damascene architecture could be undertaken via oxygen RIE of the ILD.With the primary goal to improve adhesion, numerous research papers have devoted attention to the interface between metal films and surfacemodified fluoropolymers. Surface modification has been achieved by low-energy ion beams; 2,3 argon plasma; 4 water-vapor plasma; 5 remote-hydrogen plasma; 6,7 oxygen plasma; 8 filament-assisted watervapor modification; 9,10 strong bases, such as KOH and LiOH; 11,12 solution-borne reducing agents, such as benzoin dianion/DMSO and NaBH 4 ; 13,14 and solvated electrons. 15,16 Further, a book and a review article discuss the surface modification of polymeric surfaces via plasmas. 17,18 However, it is the particular interest here to study how fluorocarbons interact with oxidizing plasmas.There are two components of a typical plasma that can damage or etch a polymeric surface, the The fluorine stability of two parylenes, aliphatic-fluorinated AF-4 (␣, ␣, ␣Ј, ␣Ј poly(p-tetrafluoroxylylene) and aromatic-fluorinated VT-4 (2, 3, 5, 6 poly(p-tetrafluoroxylylene), were investigated underneath Al, Al 2 O 3 , and TaN X overlayers with and without exposure to oxygen reactive-ion etching (RIE). No fluorine diffusion was observed for Al films deposited onto the as-received parylenes. However, after oxygen RIE, x-ray photoelectron spectroscopy (XPS) depth profiling detected fluorine diffusion throughout Al and to a lesser extent Al 2 O 3 but in contrast to Ta 2.67 N. Metal-fluoride bonding was evident at the metal/parylene interface for all the overlayers after the parylene was exposed to oxygen RIE and annealed.

show abstract

“…It has been observed that the mechanical behaviour of metal/fluoropolymers interface is highly dependent on the chemistry of the interface. It is known that there are materials that have a low surface tension [17][18][19][20][21][22]. The surface tension depends on the constituent groups and decreases in the order of CH 2 > CH 3 > CF 2 > CF 3 [23][24][25].…”

Section: Resultsmentioning

confidence: 99%