Iridium Thin Films Deposited by Liquid Delivery MOCVD using Ir(EtCp)(1,5‐COD) with Toluene Solvent

Ritterhaus, Yves; Hur'yeva, Tetyana; Lisker, Marco; Burte, Edmund P.

doi:10.1002/cvde.200706630

Cited by 18 publications

(17 citation statements)

References 21 publications

(16 reference statements)

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“…72 To maintain the oxygen barrier properties of Ir lms with columnar structure to be used as a bottom electrode for DRAMs an additional interface is needed, such as Al 2 O 3 .…”

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confidence: 99%

Chemical vapour deposition of Ir-based coatings: chemistry, processes and applications

et al. 2015

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“…72 To maintain the oxygen barrier properties of Ir lms with columnar structure to be used as a bottom electrode for DRAMs an additional interface is needed, such as Al 2 O 3 .…”

mentioning

confidence: 99%

Chemical vapour deposition of Ir-based coatings: chemistry, processes and applications

et al. 2015

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“…Sr-Ta, Bi and Ti precursors were dissolved in octane of 0.02 mole/L concentration, Nb was dissolved of 0.005 mole/L concentration. Previously we reported the application of these precursors for SBT films deposition [17] [24] [25]. The process temperature was varied from 400˚C to 550˚C, the pressure in the chamber was kept at about 5.0 mbar.…”

Section: Methodsmentioning

confidence: 99%

Enhanced ferroelectric properties of multilayer SBT-BTN thin films for NVRAM applications

Khorkhordin

Yeh

Kalkofen

et al. 2016

Integrated Ferroelectrics

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Ferroelectric SrBi2Ta2O9-(Bi4Ti3)1-xNbxO12 (x = 0.02) (SBT-BTN) multilayer thin films with various stacking periodicity have been synthesized on Ir/Ti/SiO2/Si substrate by metal organic chemical vapor deposition technique (MOCVD). Tributylbismuth [Bi(C4H9)3], Strontium-bis[Tantal(pentanethoxy)(2-methoxyethoxid)] [Sr[Ta(OEt)5(OC2H4OMe)]2], Titanium Bis(isopropoxy)bis(1-methoxy-2-methyl-2-propoxide) [Ti(OiPr)2(mmp)2] and Niob-ethoxide [Nb(OC2H5)5] were selected as precursors. X-ray diffraction patterns show that the multilayer films annealed at 800˚C consist of fully formed perovskite phase with polycrystalline structure and plate-like grains with no crack. The remanent polarization (2•Pr) and coercive field (Ec) are 16.2 μC/cm 2 and 230 kV/cm, respectively, which is much higher, compared to pure SBT film (2•Pr = 6.4 μC/cm 2 , Ec = 154 kV/cm). In the films prepared above 700˚C, postannealing increased the capacitor shorting rate; this was attributed to oxidizing of the top iridium layer. In this paper, the dependence of composition variation around stoichiometric on ferroelectric properties in SBT-BTN multilayer films is studied.

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“…In this case the growth rate increased linearly until 400°C with an activation energy of 0.2±0.001 eV. Above 400°C the growth rate was constant at 2.66 nm/min, which indicates a mass transfer-limited regime where the impingement rate of reactant species on the substrate surface is the rate controlling step (17).…”

Section: Study Of the Reaction Kineticsmentioning

confidence: 95%

Silver Films Deposited by Liquid-Delivery MOCVD using (Tertbutylcarboxylate)(Triethylphosphine)Silver with Toluene as the Solvent

et al. 2009

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Silver metallic films are prepared by liquid-delivery metal organic chemical vapor deposition (MOCVD) using (tertbutylcarboxylate) (triethylphosphine)silver ((Ag(OOCCH 2 t Bu)(PEt 3 )) n ) solved 1M in toluene. The deposition of Ag thin films was carried out on different substrates at different pressures and at temperatures within 300-550 o C range. The reaction kinetics, film composition, film morphology and electrical properties of deposited Ag films were investigated. All the films were polycrystalline metallic silver as analyzed by X-ray diffraction with a preferred crystalline orientation (111). The surface structure investigation indicated that silver island formation takes place when Si and Si/SiO 2 substrates were used, leading to a resistivity of the films from few kΩcm to infinity. In case of the silver films deposited on Si/SiO 2 /TiO 2 substrates the films are rough but continuous showing a low resistivity (few mΩcm) and offering potential applications in storage-capacitors or for solar cells technology.

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Iridium Thin Films Deposited by Liquid Delivery MOCVD using Ir(EtCp)(1,5‐COD) with Toluene Solvent

Cited by 18 publications

References 21 publications

Chemical vapour deposition of Ir-based coatings: chemistry, processes and applications

Chemical vapour deposition of Ir-based coatings: chemistry, processes and applications

Enhanced ferroelectric properties of multilayer SBT-BTN thin films for NVRAM applications

Silver Films Deposited by Liquid-Delivery MOCVD using (Tertbutylcarboxylate)(Triethylphosphine)Silver with Toluene as the Solvent

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