Iridium film growth with indium tris-acetylacetonate: oxygen and substrate effects

Sun, Yiyong; Endle, J. P.; Smith, Kenneth; Whaley, Sandra R.; Mahaffy, Rachel; Ekerdt, John G.; White, John; Hance, R. L.

doi:10.1016/s0040-6090(98)01458-8

Cited by 43 publications

(21 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Iridium acetylacetonate, Ir(acac) 3 , exhibits the highest thermal stability among the acetylacetonates of the platinum group metals. 5) Conveniently, it sublimes without significant decomposition at 453-473 K 15) and then it decomposes in an oxygen atmosphere above 525 K. 6) Thus, Ir(acac) 3 has become one of the most common complexes for CVD of iridium (see Table 2). The thermal properties of Ir(acac) 3 have been published.…”

Section: -Diketonate Iridium Complexesmentioning

confidence: 99%

“…22,23) It has been confirmed that the addition of oxygen reduces considerably the carbon contamination and improves the film morphology. High-purity iridium films (<1 mass%C, O) were obtained by introducing oxygen during the film growth, maintaining the precursor at 453 K. 15) Hydrogen gas has been used to a lesser extent as a reactive gas for Ir(acac) 3 . 23,24) Therefore, it is difficult to assess the effect of hydrogen on the level of carbon impurity in films prepared from Ir(acac) 3 .…”

Section: -Diketonate Iridium Complexesmentioning

confidence: 99%

See 1 more Smart Citation

Chemical Vapor Deposition of Iridium, Platinum, Rhodium and Palladium

2003

View full text Add to dashboard Cite

This article reviews the progress in the chemical vapor deposition of iridium, platinum, rhodium and palladium metals. In the course of the last decade the number of articles on CVD of this group of metals has increased significantly. A wide variety of metal organic complexes have been investigated as potential precursors and appreciable results have been obtained. However, some aspects such as low deposition rates and impurity incorporation into the films still remain as concerns in this area. The representative results on CVD of these metals are presented according to the type of metal organic complexes used.

show abstract

Section: -Diketonate Iridium Complexesmentioning

confidence: 99%

Section: -Diketonate Iridium Complexesmentioning

confidence: 99%

Chemical Vapor Deposition of Iridium, Platinum, Rhodium and Palladium

2003

View full text Add to dashboard Cite

show abstract

“…1,2 Ir is of great interest because of its unique properties, including a high melting point (ϳ2713 K), low oxygen permeability, high chemical stability, and good electric conductivity, to name a few. [1][2][3][4] As a result, it is currently being considered by NASA as a substrate ͑Ir on fused silica͒ for use in space contamination studies. 5,6 For use in space, Ir films with excellent surface qualities are necessary, including extremely low surface roughness and superb stability in the adverse environment in space.…”

Section: Introductionmentioning

confidence: 99%

Optical constants and roughness study of dc magnetron sputtered iridium films

Woollam

2002

Journal of Applied Physics

View full text Add to dashboard Cite

Extremely smooth thin films of iridium have been deposited onto superpolished fused silica substrates using dc magnetron sputtering in an argon plasma. The influence of deposition process parameters on film microroughness has been investigated. In addition, film optical constants have been determined using variable angle spectroscopic ellipsometry, over the spectral range from vacuum ultraviolet to middle infrared ͑140 nm-35 m͒. Because the Ir films were optically thick and the surface roughnesses were measured by atomic force microscopy then accounted for in the optical model, the as-determined film optical constants are expected to be the best available for Ir bulk metals, minimally affected by surface overlayers or microstructure.

show abstract

“…Hoke [9] and Sun [10] has used cyclooctadiene complexes of iridium co-dosed with O 2 for MOCVD iridium films growth and obtained pure iridium films at temperature between 122 o C and 35 o C. Goto [11],Vargas [12],Gelfond [13] and Sun [14] have used tris-acetylacetonate iridium as precursor and obtained pure iridium films at temperature between 180 o C and 350 o C. Tris-(allyl)-iridium, an air sensitive precursor, was used to produce clean deposits at temperature 100 o C, under H 2 , on SiO 2 substrates [15].Among these precursors, Trisacetylacetonate iridium (Ir(AA) 3 ) complex was the best choice due to its excellent air stability. However its high melting point and low volatility limited its possible use field.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Thermal Decomposition Mechanism Study of a Novel Iridium Precursor

Yan

et al. 2016

MATEC Web of Conferences

View full text Add to dashboard Cite

Abstract. Ir(TFA)3 (TFA=1,1,1-trifluoro-2,4-pentanedionate) metal complexes with high purity was successfully synthesized. The metal complexes have been characterized by elemental analysis, infrared spectroscopy, nuclear magnetic resonance spectroscopy. The volatility of metal complexes was studied by thermogravimetry analysis. And a possible decomposition mechanism was studied by mass spectroscopic analysis method. The novel iridium complexes can be severed as precursor in metalorganic chemical vapor deposition of iridium films. iridium films were deposited by metalorganic chemical vapor deposition method, and the Ir(TFA)3 complex was used as precursor. The iridium thin films were characterized by X-ray diffraction and scanning electron microscopy in order to determine crystallinity and surface morphology.

show abstract

Iridium film growth with indium tris-acetylacetonate: oxygen and substrate effects

Cited by 43 publications

References 5 publications

Chemical Vapor Deposition of Iridium, Platinum, Rhodium and Palladium

Chemical Vapor Deposition of Iridium, Platinum, Rhodium and Palladium

Optical constants and roughness study of dc magnetron sputtered iridium films

Synthesis and Thermal Decomposition Mechanism Study of a Novel Iridium Precursor

Contact Info

Product

Resources

About