IR bolometers based on amorphous silicon germanium alloys

Garcı́a, M.; Ambrosio, Roberto; Torres, A.; Kosarev, A.

doi:10.1016/j.jnoncrysol.2004.03.082

Cited by 55 publications

(36 citation statements)

References 6 publications

(7 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It was reported in 2004 (Garcia, 2004) that the noise current of the bridge-supported structures is one order of magnitude higher than that of the membrane-supported structure. However, the bridge-supported structure process flow enables a precise control on the resonant cavity length which makes it the dominant design for microbolometers.…”

Section: Wwwintechopencommentioning

confidence: 96%

See 1 more Smart Citation

Group IV Materials for Low Cost and High Performance Bolometers

Radamson¹,

Kolahdouz²

2012

Bolometers

View full text Add to dashboard Cite

Section: Wwwintechopencommentioning

confidence: 96%

“…11. Cross-section of a) the membrane-supported and b) the bridge-supported microbolometer (Garcia, 2004).…”

Section: Fabrication Process Flowmentioning

confidence: 99%

Group IV Materials for Low Cost and High Performance Bolometers

Radamson¹,

Kolahdouz²

2012

Bolometers

View full text Add to dashboard Cite

“…The resistivity of SiGe can be kept low by controlling the doping level, but this sets an upper limit to TCR (−(2.5-3) %/K). Processing of poly:SiGe materials to achieve the desired crystallinity requires temperatures as high as 650°C [16]. In this work, we have selected to investigate amorphous Si x Ge y O 1-x-y for the IR sensing material as a new addition to the mainstream materials and to take the technology of VOx and a-Si further because of its excellent IR radiation absorption, and mechanical and electrical properties at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Noise Reduction of Amorphous Si_xGe_yO_1–x–yThin Films for Uncooled Microbolometers by Si₃N₄Passivation and Annealing in Vacuum

et al. 2016

View full text Add to dashboard Cite

This paper presents the fabrication and reduction of noise voltage power spectral density (PSD) of Si x Ge y O 1−x− y uncooled infrared microbolometers with four different compositions. The noise reduction was achieved by passivating Si x Ge y O 1−x− y with Si 3 N 4 layers and by annealing the devices in vacuum at 200°C, 250°C, or 300°C with different time intervals from 1 to 5 h. The voltage noise PSD was measured with a bias current between 0.07 and 0.6 µA before and after annealing. The lowest measured noise voltage PSD before annealing was on devices with Si 0.053 Ge 0.875 O 0.072 and Si 0.041 Ge 0.902 O 0.057 films. They were 7.42 × 10 −15 and 2.07 × 10 −14 V 2 /Hz at 23 Hz, respectively. The corresponding 1/f -noise coefficients, K f , of the devices were 3.65 × 10 −14 and 3.01 × 10 −14 , respectively.The voltage noise PSD was reduced as the annealing time and temperature were increased. The lowest measured noise was 1.96 × 10 −14 V 2 /Hz at the corner frequency, 12 Hz, on a device with Si 0.034 Ge 0.899 O 0.067 film annealed at 300°C for 4 h, before annealing the noise was 4.09 × 10 −13 V 2 /Hz at 12 Hz. This corresponds to a factor of 24 reduction of noise. The testing results demonstrate that annealing at higher temperature 300°C reduced the low-frequency voltage noise PSD more than that of 200°C and 250°C temperatures.

show abstract

“…During the last decade, single crystalline (Sc) SiGe has been recognized and employed as a new low cost thermistor material for infrared (IR) detection [1][2][3]. Other thermistor materials available in the market include vanadium oxide (VOx), poly-or amorphous semiconductors which acquire relatively good SNRs and TCRs [4][5][6][7][8][9]. A drawback with VOx material is its incompatibility to silicon technology.…”

Section: Introductionmentioning

confidence: 99%

High performance infra-red detectors based on Si/SiGe multilayers quantum structure

Kolahdouz

Östling

Radamson

2012

Materials Science and Engineering: B

View full text Add to dashboard Cite

IR bolometers based on amorphous silicon germanium alloys

Cited by 55 publications

References 6 publications

Group IV Materials for Low Cost and High Performance Bolometers

Group IV Materials for Low Cost and High Performance Bolometers

Noise Reduction of Amorphous Si_xGe_yO_1–x–yThin Films for Uncooled Microbolometers by Si₃N₄Passivation and Annealing in Vacuum

High performance infra-red detectors based on Si/SiGe multilayers quantum structure

Contact Info

Product

Resources

About

IR bolometers based on amorphous silicon germanium alloys

Cited by 55 publications

References 6 publications

Group IV Materials for Low Cost and High Performance Bolometers

Group IV Materials for Low Cost and High Performance Bolometers

Noise Reduction of Amorphous SixGeyO1–x–yThin Films for Uncooled Microbolometers by Si3N4Passivation and Annealing in Vacuum

High performance infra-red detectors based on Si/SiGe multilayers quantum structure

Contact Info

Product

Resources

About

Noise Reduction of Amorphous Si_xGe_yO_1–x–yThin Films for Uncooled Microbolometers by Si₃N₄Passivation and Annealing in Vacuum