Ionizing radiation hardness tests of GaN HEMTs for harsh environments

Bôas, Alexis C. Vilas; Melo, M. A. A. de; Santos, R.B.B.; Giacomini, Renato; Medina, N. H.; Seixas, L. E.; Finco, Saulo; Palomo, F.R.; Romero-Maestre, Amor; Guazzelli, Marcilei A.

doi:10.1016/j.microrel.2020.114000

Cited by 17 publications

(11 citation statements)

References 22 publications

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“…In this X-ray test, the experiment was ended when the PSoC system failed completely, with an accumulated dose of 30.6 krad(Si). Details on the adopted X-ray dosimetry methodology can be found in reference [30].…”

Section: B Resultsmentioning

confidence: 99%

Testing a Fault Tolerant Mixed-Signal Design Under TID and Heavy Ions

González

Machado

Vaz³

et al. 2021

JICS

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This work presents results of three distinct radiation tests performed upon a fault-tolerant data acquisition system comprising a design diversity redundancy technique. The first and second experiments are Total Ionizing Dose (TID) essays, comprising gamma and X-ray irradiations. The last experiment considers single event effects, in which two heavy ion irradiation campaigns are carried out. The case study system comprises three analog-to-digital converters and two software-based voters, besides additional software and hardware resources used for controlling, monitoring and memory management. The applied Diversity Triple Modular Redundancy (DTMR) technique, comprises different levels of diversity (temporal and architectural). The circuit was designed in a programmable System-on-Chip (PSoC), fabricated in a 130nm CMOS technology process. Results show that the technique may increase the lifetime of the system under TID if comparing with a non-redundant implementation. Considering the heavy ions experiments the system was proved effective to tolerate 100% of the observed errors originated in the converters, while errors in the processing unit present a higher criticality. Critical errors occurring in one of the voters were also observed. A second heavy-ion campaign was then carried out to investigate the voters reliability, comparing the dynamic cross-section of three different software-based voter schemes implemented in the considered PSoC.

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Section: B Resultsmentioning

confidence: 99%

Testing a Fault Tolerant Mixed-Signal Design Under TID and Heavy Ions

González

Machado

Vaz³

et al. 2021

JICS

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“…The large dose of 990 kGy creates Frenkel pairs and other defects. [ 200 ] The photoemission peak (700 nm) perceived due to gamma irradiation is close to the transition energy (1.83 eV) of Ga interstitials (from the +1 state to the +2 state). [ 201 ] However, the emission intensity of 250 µm wafer single‐crystal increases as the absorption rate of gamma radiation increases (Figure 14d).…”

Section: Radiation Effect On Thin Films Transistor (Tft)mentioning

confidence: 98%

“…Reproduced with permission. [200] Copyright 2021, Elsevier Ltd. device characteristics. [198] Overall, the neutron fluence should be <10 15 n cm −2 to avoid the degradation of the GaN Schottky contact, especially with thermal neutrons.…”

Section: Nitride Semiconductors-based Tftsmentioning

confidence: 99%

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Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Muhammad

Wang

Zhang

et al. 2022

Adv Materials Technologies

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These energetic particles, such as electrons, protons, neutrons, X-rays, or gamma rays, induced damage in materials (used in electronic devices) through total ionization and displacement, [4] which would affect the reliability of the electronic devices. [5][6][7] Electronics failure occurs in harsh and inaccessible environments through various paths, such as electromagnetic waves, nuclear reactions, and high-frequency communications systems. Therefore, the radiationhardened requirements of the deployed electronic technology depend on the specific high-energy photons and particles in the radiation environment. For example, Mars exploration requires a special proton anti-radiation in electronics. At the same time, the safety supervision and inspection of the contaminated nuclear area are suggested to be equipped with high resilience towards the alpha, beta, and gamma rays. The development of radiation-hard electric circuits over the years has led researchers to consider the application of functional anti-irradiation material to devices. The current focus is on developing complementary metal-oxide semiconductors (CMOS) with wide bandgap semiconductors (WBGs), which are well suited to large-area aerospace applications. [8][9][10] As shown in Figure 1, a notable material class of WBGs can be listed as metal oxides (MOS), transition-metal dichalcogenides (TMDs), silicon carbide, gallium nitride, and others. WBGs materials contribute robust properties under harsh conditions due to their strong electronic compliance, high-temperature competence, and strong atomic bond energy. [11][12][13][14][15][16] They have been proposed as favorable materials for aerospace and other radiation-hardened applications. Generally, the bandgap in the semiconductor reflects the extra energy that a valence electron must access to become a free electron. Its large bandgap of more than 3 eV guarantees inherent reliability in the semiconductors, providing transparency for the low-energy photons. The large, spherical nsorbitals in the conduction band (CB) of MOS also play a critical role in high dopability for hosting a high density of electrons, leading to the remarkably tolerance to various radiation fluences. [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] Understanding the apparent immunity of the WBGs to various radiation environments and radiation-hard electronic engineering would be critical for pushing the technology further and understanding its limitations. Efforts to address these issues have been underway over the past two decades. Substantial progress has also been made in designing radiation-hard thin films transistors (TFTs) with ZnO, Ga 2 O 3 , In 2 O 3 , SnO 2 , IGZO, SiC, GaN, and many other WBGs, The aspiration of electronic technologies that are resistant to high-energy cosmic radiation is essential for current harsh radiation environment exploration. Integrated circuits mostly require post-processing after designing, making their structures more complex than the standard systems. Thus, unique de...

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“…As human society has started to expand its field of interest in space exploration and alternative energy production, the use of electronic devices in harsh radiation environments has increased over the past decades and is expected to grow even more dramatically. − For example, increased space activity and the development of civilian space programs, such as SpaceX, have boosted the popularity of the space industry and given rise to the development of radiation-resistant large-area devices for future space equipment. , Radiation-resistant electronic devices are also needed in nuclear power plants where radioactive waste is discharged . Ionizing radiation is not only problematic for electronic devices that are intended for such missions or safety-critical applications but also for general semiconductor devices, in which daily radiation exposure has become a serious problem. , Presently, as the dimensions of electronic circuits are becoming ever smaller, with certain components becoming nano-scaled, faulty products may result from cosmic radiation during the air transportation with high altitudes . Row hammer faults in dynamic random access memory (DRAM) circuits or soft errors occurring in computers and smartphones even on the earth’s surface are regarded to originate from cosmic radiation …”

Section: Introductionmentioning

confidence: 99%

In Situ Radiation Hardness Study of Amorphous Zn–In–Sn–O Thin-Film Transistors with Structural Plasticity and Defect Tolerance

Choi

Kang

et al. 2023

ACS Appl. Mater. Interfaces

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Solution-processed metal-oxide thin-film transistors (TFTs) with different metal compositions are investigated for ex situ and in situ radiation hardness experiments against ionizing radiation exposure. The synergetic combination of structural plasticity of Zn, defect tolerance of Sn, and high electron mobility of In identifies amorphous zinc−indium−tin oxide (Zn−In−Sn−O or ZITO) as an optimal radiation-resistant channel layer of TFTs. The ZITO with an elemental blending ratio of 4:1:1 for Zn/In/Sn exhibits superior ex situ radiation resistance compared to In−Ga− Zn−O, Ga−Sn−O, Ga−In−Sn−O, and Ga−Sn−Zn−O. Based on the in situ irradiation results, where a negative threshold voltage shifts and a mobility increase as well as both off current and leakage current increase are observed, three factors are proposed for the degradation mechanisms: (i) increase of channel conductivity, (ii) interface-trapped and dielectric-trapped charge buildup, and (iii) trap-assisted tunneling in the dielectric. Finally, in situ radiation-hard oxide-based TFTs are demonstrated by employing a radiationresistant ZITO channel, a thin dielectric (50 nm SiO 2 ), and a passivation layer (PCBM for ambient exposure), which exhibit excellent stability with an electron mobility of ∼10 cm 2 /V s and aΔV th of <3 V under real-time (15 kGy/h) gamma-ray irradiation in an ambient atmosphere.

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Ionizing radiation hardness tests of GaN HEMTs for harsh environments

Cited by 17 publications

References 22 publications

Testing a Fault Tolerant Mixed-Signal Design Under TID and Heavy Ions

Testing a Fault Tolerant Mixed-Signal Design Under TID and Heavy Ions

Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

In Situ Radiation Hardness Study of Amorphous Zn–In–Sn–O Thin-Film Transistors with Structural Plasticity and Defect Tolerance

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