Ionization growth in carbon monoxide

Davies, Gillian; Williams, A. W.

doi:10.1088/0022-3727/10/3/007

Cited by 8 publications

(11 citation statements)

References 20 publications

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“…It has been suggested that band A luminescence originates from electronhole recombination at donor-acceptor pairs [31]. In this the donor might be an aggregate of an even number of substitutional nitrogen atoms [34] with boron as acceptor [35,36]. On the other hand it was argued that band A in CVD diamond is caused by dislocations [32,37,38], in which case the CL is expected to be polarized with the E-vector parallel to the dislocation line [39,40].…”

Section: Macrostep Patterns On {001} Diamond Facesmentioning

confidence: 99%

Mosaic growth of diamond: a study of homoepitaxial flame deposition and etching of {001}-oriented diamond layers

Schermer

Theije

Giling

1996

Journal of Crystal Growth

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This study describes homoepitaxial growth and etch phenomena observed on cubic diamond faces as obtained by the application of an acetylene-oxygen combustion flame. It is demonstrated that flame etching of the diamond substrates prior to growth decreases the number of crystallographic imperfections in the diamond layers especially at the edges. This enables a more uniform distributed step generation by the large number of individual dislocations present in the used natural type IIa diamond substrates. Due to this improvement it appears possible to grow one single crystal diamond layer on top of several closely spaced, well-aligned natural diamond substrates. In the present work the overgrowth of a three-piece mosaic structure with gaps along (100) as well as along (110) is reported for the first time. The single crystal nature of this flame-deposited diamond layer could be confirmed by the observation of continuous growth step patterns at the surface across the joint regions. The widths of the gaps between the substrates in the original mosaic structure varied from 7 to 25 ~m, which is more than an order of magnitude larger than the gaps along (100) in two-piece mosaic structures, of which the single crystal overgrowth by HFCVD was previously reported. Comparison of micro-Raman spectra obtained from the joint regions with those from other parts of the overgrown mosaics discussed in the present work, show a larger FWHM of the diamond peak in case of a (110) joint and a shift of the peak position to higher wave numbers in case of a (100) joint.

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Section: Macrostep Patterns On {001} Diamond Facesmentioning

confidence: 99%

Mosaic growth of diamond: a study of homoepitaxial flame deposition and etching of {001}-oriented diamond layers

Schermer

Theije

Giling

1996

Journal of Crystal Growth

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“…Most of the optical centres found so far in diamond are caused by nitrogen, which is the most abundant impurity in both natural and synthetic diamonds [1][2][3]. In the diamond lattice nitrogen may be present in different structural forms.…”

Section: Introductionmentioning

confidence: 99%

Analysis of GaN Damage Induced by Cl₂/SiCl₄/Ar Plasma

Minami,

Tomiya,

Ishikawa

et al. 2011

Jpn. J. Appl. Phys.

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We examined the effect of radiation damage and annealing on the optical properties of nitrogen-gettered nearly IIa type synthetic diamonds. It was found that the 2.156 eV centre, whose absorption is usually very weak, appears in these diamonds as one of the dominant absorption features. A new vacancy-related vibronic absorption system with zero-phonon line at 3.420 eV was observed. A pronounced photochromic effect was established for the 1.945, 2.085, 2.156, 3.420 and 4.325 eV absorption bands. Of all these bands only the 2.156 eV band remains in the absorption spectra after a proper photoexcitation. In contrast, for similarly treated type Ib diamonds we did not reveal any photoinduced changes in the 1.945 eV band absorption. Based on the results of optical bleaching and thermal recovery experiments, we conclude that the assignment of the 2.156 eV centre to the neutral charge state of the nitrogen-vacancy defect needs further verification. § Corresponding author.

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“…The above parameters corresponding to Raman heterodyne detected NMR signals associated with the 7F0-SD 0 transition in Eu 3+ make an interesting comparison with those for observing EPR resonances associated with a particular transition in a nitrogen-vacancy (N-V) pair centre in diamond [18,19]. The N-V centre has an allowed, radiative limited optical transition in the red with a lifetime of -13 ns [20] corresponding to an oscillator strength of -0.5.…”

Section: The Raman Heterodyne Techniquementioning

confidence: 99%

Application of the Raman heterodyne technique for the detection of EPR and ENDOR

Manson

Fisk

1992

Appl. Magn. Reson.

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Raman heterodyne detectionis a coherent optical-RF double resonance technique where the optical and RF fields induce coherence within a three level system and a resultant Raman field is measured using heterodyne detection. This approach has been used previously to detect NMR and more recently EPR. In this paper the parameters that affect the amplitude and signal to noise ratio of the Raman heterodyne signals are considered. The power levels in relation to the osciUator strength and dephasing times, the amplitude and spectrum of the laser frequency jitter in relation to the optical homogeneous linewidths and holeburning rates, and the sample properties such as absorption strength and optical quality, are all factors that affect the Raman signal. The presentation is focused on the Raman heterodyne detected EPR of the nitrogen-vacancy pair centre in diamond making comparisons with Raman heterodyne detected NMR signals obtained for rare earth ion systems. RF-RF double resonance studies, RF holeburning and ENDOR, which give information about the hyperfine levels are also reported for the nitrogen-vacancy centre. The resonance frequencies are in agreement with those predicted from the spin Hamiltonian. The factors affecting the lineshapes and relative intensities of the double resonance signals are discussed.

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Ionization growth in carbon monoxide

Cited by 8 publications

References 20 publications

Mosaic growth of diamond: a study of homoepitaxial flame deposition and etching of {001}-oriented diamond layers

Mosaic growth of diamond: a study of homoepitaxial flame deposition and etching of {001}-oriented diamond layers

Analysis of GaN Damage Induced by Cl₂/SiCl₄/Ar Plasma

Application of the Raman heterodyne technique for the detection of EPR and ENDOR

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Ionization growth in carbon monoxide

Cited by 8 publications

References 20 publications

Mosaic growth of diamond: a study of homoepitaxial flame deposition and etching of {001}-oriented diamond layers

Mosaic growth of diamond: a study of homoepitaxial flame deposition and etching of {001}-oriented diamond layers

Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma

Application of the Raman heterodyne technique for the detection of EPR and ENDOR

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Analysis of GaN Damage Induced by Cl₂/SiCl₄/Ar Plasma