2022
DOI: 10.1016/j.cej.2021.131114
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Ionization-bombardment assisted deposition of MXene/SiC heterostructure for micro-supercapacitor with enhanced sodium storage

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Cited by 30 publications
(28 citation statements)
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“…59 In LiF + HCl, NH 4 + etchants, both Li + and NH 4 + have the ability to intercalate in MXene, thus allowing mechanical sonication to obtain a single layer of MXene, while etching steps where intercalation is not possible (e.g., HF) require additional intercalation to obtain a single layer of MXene, with the option of mechanical layering and solvent intercalation layering methods. 15,[60][61][62][63][64][65][66] Due to the strong interactions between multiple layers of MXene, most organic compounds are currently chosen as intercalators for delamination, [67][68][69][70][71][72] for example, hydrazine hydrate, urea, isopropylamine, tetrabutylammonium hydroxide or dimethylsulfoxide after HF etching, the latter two being considered as excellent intercalators for use. [73][74][75][76][77][78][79][80] In summary, it can be seen that the various preparation schemes for MXene have shortcomings.…”
Section: Other Methods Of Etchingmentioning
confidence: 99%
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“…59 In LiF + HCl, NH 4 + etchants, both Li + and NH 4 + have the ability to intercalate in MXene, thus allowing mechanical sonication to obtain a single layer of MXene, while etching steps where intercalation is not possible (e.g., HF) require additional intercalation to obtain a single layer of MXene, with the option of mechanical layering and solvent intercalation layering methods. 15,[60][61][62][63][64][65][66] Due to the strong interactions between multiple layers of MXene, most organic compounds are currently chosen as intercalators for delamination, [67][68][69][70][71][72] for example, hydrazine hydrate, urea, isopropylamine, tetrabutylammonium hydroxide or dimethylsulfoxide after HF etching, the latter two being considered as excellent intercalators for use. [73][74][75][76][77][78][79][80] In summary, it can be seen that the various preparation schemes for MXene have shortcomings.…”
Section: Other Methods Of Etchingmentioning
confidence: 99%
“…According to theoretical calculations, MXenes without functional groups on the surface exhibit a certain degree of magnetism, 127–129 but once functional groups are present, the magnetism decreases or even disappears, but there are special cases where, for example, chromium‐based MXenes exhibit magnetism even in the presence of functional groups 64 …”
Section: Synthesis and Properties Of Mxenementioning
confidence: 99%
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“…4g shows the Ragone plot of the IL-based GaN SC. These high power-energy densities exceed those of many other previously reported SC devices, such as graphene oxide (8.55 μW h cm −2 , 0.0853 mW cm −2 , 100 °C), 42 graphene (1.63 μW h cm −2 , 0.09 mW cm −2 , 100 °C), 43 SiC@C (1.37 μW h cm −2 , 4.84 mW cm −2 ), 44 MXene/SiC heterostructure (6 μW h cm −2 , 8 mW cm −2 ), 45 GaN MM (0.65 μW h cm −2 , 45 mW cm −2 ), 14 porous AlN (3.88 μW h cm −2 , 0.34 mW cm −2 ), 46 GaN crystal membrane (0.58 μW h cm −2 , 45 mW cm −2 ), 47 4H-SiC (2.20 μW h cm −2 , 11.2 mW cm −2 ), 48 CDC/TiC film (1.58 μW h cm −2 , 0.28 mW cm −2 ), 49 and I-Ti 3 CT x (0.63 μW h cm −2 , 0.32 mW cm −2 ) devices. 50 We believe that excellent performance can be realized in extreme environments by utilizing state-of-the-art electrode materials and packaging techniques.…”
Section: Resultsmentioning
confidence: 99%
“…Converting the planar structure of 2D MXene film into an interpenetrating network with open or porous structures is an effective way to construct high-performance supercapacitors. Xia et al [ 97 ] prepared a MXene/SiC heterostructure by ionization-bombardment assisted deposition for a micro-supercapacitor. The electrochemical test results showed that the specific capacity of the MXene/SiC heterostructure was as high as 97.8 mF·cm −2 at the current density of 1 A·cm −2 , which was mainly due to the unique three-dimensional network structure of the heterostructure.…”
Section: Applications Of Mxene-based Heterostructuresmentioning
confidence: 99%