2022
DOI: 10.1039/d2ta04540k
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Vacancy-modified few-layered GaN crystal for novel high-temperature energy storage

Abstract: Exploring energy storage materials with ultralong cycle lifespan and high energy-power density in extremely high-temperature environments is key point. In this works, gallium nitride (GaN) crystal is applied in the...

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Cited by 8 publications
(8 citation statements)
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“…Lv et al 158 applied GaN crystals to high-temperature energy storage for the first time. Through an efficient and simple strategy, several layers of GaN crystals rich in N vacancies were designed and prepared, which further increased their specific surface area and active bits (Fig.…”
Section: Advanced Novel Semiconductor Materials For Scsmentioning
confidence: 99%
“…Lv et al 158 applied GaN crystals to high-temperature energy storage for the first time. Through an efficient and simple strategy, several layers of GaN crystals rich in N vacancies were designed and prepared, which further increased their specific surface area and active bits (Fig.…”
Section: Advanced Novel Semiconductor Materials For Scsmentioning
confidence: 99%
“…Further, they claimed that this work has opened up a new avenue for the application of GaN crystal materials. 30 …”
Section: Application Of Gallium-based Materials Towards Supercapacitorsmentioning
confidence: 99%
“…The dual carbon strategy requires the development of more energy-efficient, safe and reliable energy storage equipment to achieve sustainable economic development. [1][2][3] Compared with lithium batteries, supercapacitors (SCs), as a new type of energy storage equipment, have attracted much research attention due to their advantages of high power density and long cycle life. [4][5][6][7] To expand the operating temperature range of SCs and meet the needs of modern applications, 8 researchers have carried out a series of improvement studies on the selection of electrodes and electrolytes.…”
Section: Introductionmentioning
confidence: 99%