Ionic liquid multistate resistive switching characteristics in two terminal soft and flexible discrete channels for neuromorphic computing

Abstract

By exploiting ion transport phenomena in a soft and flexible discrete channel, liquid material conductance can be controlled by using an electrical input signal, which results in analog neuromorphic behavior. This paper proposes an ionic liquid (IL) multistate resistive switching device capable of mimicking synapse analog behavior by using IL BMIM FeCL4 and H2O into the two ends of a discrete polydimethylsiloxane (PDMS) channel. The spike rate-dependent plasticity (SRDP) and spike-timing-dependent plasticity (STDP) behavior are highly stable by modulating the input signal. Furthermore, the discrete channel device presents highly durable performance under mechanical bending and stretching. Using the obtained parameters from the proposed ionic liquid-based synaptic device, convolutional neural network simulation runs to an image recognition task, reaching an accuracy of 84%. The bending test of a device opens a new gateway for the future of soft and flexible brain-inspired neuromorphic computing systems for various shaped artificial intelligence applications.

Advancement in Soft Iontronic Resistive Memory Devices and Their Application for Neuromorphic Computing

“…[142] The short-term memory behavior was observed for more than 2000 s, [142] as shown in Figure 8g. The partibility of the discrete channel device was illustrated by performing spike timedependent plasticity to verify the antisymmetric anti-Hebbian rule, [142] as shown in Figure 8h.…”

“…The human brain is made up of linked neurons that communicate with one another via synaptic plasticity. [75,85,142] The effective functioning of the human brain is due to synaptic plasticity between presynaptic and postsynaptic neurons. [75,76] The objective of brain-inspired neuromorphic computing is to provide a duplicate of human brain functions using electrical components.…”

“…The electrochemical neuromorphic resistive memory devices have exhibited promising synaptic behavior due to the free ion movement of cations and anions in an aqueous medium. [85,101,107,142] Researchers have explored the various liquid neuromorphic resistive memory devices to perform electronic synapses, which can be a possible potential candidate for soft neuromorphic circuits [75,77,85] Almadhoun et al reported the high-performance resistive memory device (EGlan/GaO x /SiO x /p þ -Si), [79] and Zhang et al reported the highly stable iontronic neuromorphic memristive device (Ag/AgCl/KCl/BMIM PF 6 /Ag/AgCl) [85] for electronic synapses. Najem et al reported aqueous-phase biomolecular iontronic resistive memory device, low operating voltage and current, and power.…”

Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

“…Such kind of structure helps the device engineers to fabricate a three-dimensional (3D) structured device and can achieve high-density memory storage capability . The RS devices are not only an important candidate for nonvolatile data storage application, but it is also an auspicious candidate for neuromorphic computing and security applications , because of their intrinsic electronic properties, as shown in Figure . Modern machine vision studies have attracted a lot of interest .…”

Metal–Organic Frameworks–Based Memristors: Materials, Devices, and Applications

“…Meanwhile, the fabrication process of memristors is compatible with CMOS process technology [19], allowing it to be large cross-bar arrays easily and exhibit a size scalability. More excellent properties of memristors can be realized by changing or adjusting the materials of resistive switching layer [20][21][22][23][24][25].…”