Metal–Organic Frameworks–Based Memristors: Materials, Devices, and Applications

Abstract

Facing the explosive growth of data, a number of new micro-nano devices with simple structure, low power consumption, and size scalability have emerged in recent years, such as neuromorphic computing based on memristor. The selection of resistive switching layer materials is extremely important for fabricating of high performance memristors. As an organic-inorganic hybrid material, metal-organic frameworks (MOFs) have the advantages of both inorganic and organic materials, which makes the memristors using it as a resistive switching layer show the characteristics of fast erasing speed, outstanding cycling stability, conspicuous mechanical flexibility, good biocompatibility, etc. Herein, the recent advances of MOFs-based memristors in materials, devices, and applications are summarized, especially the potential applications of MOFs-based memristors in data storage and neuromorphic computing. There also are discussions and analyses of the challenges of the current research to provide valuable insights for the development of MOFs-based memristors.

Recent Advances of Logic Gate Circuits Based on Metallo-organic Compounds

“…These organic units are usually multivalent organic carboxylates, which, when attached to metal units (e.g., Zn 2+ , Co 2+ , Cu 2+ , Mg 2+ , Ni 2+ , Al 3+ , etc . ), can produce porous structures with well-defined pore size distributions and high specific surface areas …”

“…), can produce porous structures with well-defined pore size distributions and high specific surface areas. 50 The unique advantages of MOFs with the activity of metal ions, flexible organic ligands that are functional groups with specific and excellent physical or chemical properties, and the presence of a regular three-dimensional spatial structure formed by the metal and organic ligands make MOFs highly versatile and controllable. Herein, MOFs, as a type of emerging multifunctional materials, have great potential in a number of important fields such as gas storage and separation, optical, electrical, and magnetic materials, chemical sensing, catalysis, and biomedicine, etc.…”

“…The adjustability of their electronic structures and properties gives them broad application potential in electronic devices. In the research of logic gate circuits, the introduction of metallo-organic compounds provides a new way to achieve low power consumption, high performance, versatility and reconfigurability. − Optoelectronic devices based on small molecular metal complexes, , metal polymers, , organic–inorganic hybrid perovskites (OIHPs), , and metal–organic frameworks (MOFs) , have shown broad prospects and applications in logic circuits. These materials not only have the advantages of mechanical flexibility, high optical transparency, and easy fabrication but also have tunable optical and electrical properties that can achieve functions such as sensitive photoresponse and light modulation, which provide new options and possibilities for the design and optimization of logic circuits.…”

A Simple, Robust, and Versatile MATLAB Formulation of the Dynamic Memdiode Model for Bipolar-Type Resistive Random Access Memory Devices

“…In recent years, the scientific community in the microelectronics field has expressed huge interest in RRAM (Resistive Random Access Memory) devices due to their unique properties, such as low power consumption, high scalability, endurance, and CMOS compatibility, among others [1]. As the switching material, these devices can be based on metal oxides like TiO 2 or HfO 2 , chalcogenide glasses, lower dimensional materials like nanowires or nanodots, as well as other novel materials like metal-oxide frameworks [2][3][4]. Their application range includes logic circuits, neuromorphic systems, cryptology, and information storage [5][6][7][8][9].…”

Novel Semiconductive Ternary Hybrid Heterostructures for Artificial Optoelectronic Synapses

“…Neumann bottleneck. [1,2] The resistance of such devices can be electrically switched between high resistance state (HRS) and low resistance state (LRS), including analog RS and digital RS. [3,4] With this unique controllable RS behavior, RS devices have become an efficient and reliable technology for inmemory computing.…”