Ionic liquid-enhanced soft resistive switching devices

Rajan, Krishna; Chiappone, Annalisa; Perrone, Denis; Bocchini, Sergio; Roppolo, Ignazio; Castellino, Micaela; Pirri, Candido; Ricciardi, Carlo; Chiolerio, Alessandro

doi:10.1039/c6ra18668h

Cited by 31 publications

(19 citation statements)

References 68 publications

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“…Second, the global cation injection makes it easy to form multiple slimsy CFs rather than single robust CF inside RS layer, which is disadvantageous to the retention of LRS . Third, the excessive cation injection will cause gradual accumulation of active metal species in RS layer after long‐time repeating switching cycles, leading to decrease of HRS resistance and deterioration of device reliability …”

Section: Introductionmentioning

confidence: 99%

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer

Zhao

Liu

Niu

et al. 2017

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Conductive‐bridge random access memory (CBRAM) is considered a strong contender of the next‐generation nonvolatile memory technology. Resistive switching (RS) behavior in CBRAM is decided by the formation/dissolution of nanoscale conductive filament (CF) inside RS layer based on the cation injection from active electrode and their electrochemical reactions. Remarkably, RS is actually a localized behavior, however, cation injects from the whole area of active electrode into RS layer supplying excessive cation beyond the requirement of CF formation, leading to deterioration of device uniformity and reliability. Here, an effective method is proposed to localize cation injection into RS layer through the nanohole of inserted ion barrier between active electrode and RS layer. Taking an impermeable monolayer graphene as ion barrier, conductive atomic force microscopy results directly confirm that CF formation is confined through the nanohole of graphene due to the localized cation injection. Compared with the typical Cu/HfO2/Pt CBRAM device, the novel Cu/nanohole‐graphene/HfO2/Pt device shows improvement of uniformity, endurance, and retention characteristics, because the cation injection is limited by the nanohole graphene. Scaling the nanohole of ion barrier down to several nanometers, the single‐CF‐based CBRAM device with high performance is expected to achieve by confining the cation injection at the atomic scale.

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Section: Introductionmentioning

confidence: 99%

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer

Zhao

Liu

Niu

et al. 2017

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156

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“…[8][9][10] To address the challenges in polymer-based ReRAM, ionic liquids (ILs)-liquid salts that are commonly added to solid polymer electrolytes for various electrochemical applications [11][12][13][14][15] -are being considered. In a recent report, ILs were added to polymer-based CBRAM to reduce the formation (set) bias and increase endurance; [16] however, a detailed understanding of the role that ILs play in polymerbased resistive memory is still developing. Such understanding is important to uncover the microscopic mechanisms of conductive nanofilament formation and switching, [7] and how material structure and composition can be tailored to tune performance.…”

Section: Introductionmentioning

confidence: 99%

Silver Nanofilament Formation Dynamics in a Polymer‐Ionic Liquid Thin Film by Direct Write

Chao

Sezginel

et al. 2019

Adv Funct Materials

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Silver nanofilament formation dynamics are reported for an ionic liquid (IL)-filled solid polymer electrolyte prepared by a direct-write process using a conductive atomic force microscope (C-AFM). Filaments are electrochemically formed at hundreds of xy locations on a ≈40 nm thick polymer electrolyte, polyethylene glycol diacrylate (PEGDA)/[BMIM]PF 6 . Although the formation time generally decreases with increasing bias from 0.7 to 3.0 V, an unexpected non-monotonic maximum is observed ≈2.0 V. At voltages approaching this region of inverted kinetics, IL electric double layers (EDLs) become detectable; thus, the increased nanofilament formation time can be attributed to electric field screening, which hinders silver electromigration and deposition. Scanning electron microscopy confirms that nanofilaments formed in this inverted region have significantly more lateral and diffuse features. Timedependent formation currents reveal two types of nanofilament growth dynamics: abrupt, where the resistance decreases sharply over as little as a few ms, and gradual where it decreases more slowly over hundreds of ms. Whether the resistance change is abrupt or gradual depends on the extent to which the EDL screens the electric field. Tuning the formation time and growth dynamics using an IL opens the range of accessible resistance states, which is useful for neuromorphic applications.

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“…In CBRAM cells, a nanoscale conductive metallic path between an electrochemical active working electrode/anode (such as Ag or Cu) and a reasonably inert counter electrode/cathode (such as Pt, Au, or TiN) is formed or ruptured by generation, movement, and reduction of mobile metal cations (i.e., Ag + or Cu z + , where z denotes the charge value of the ionic species). CBRAMs are typically based on oxides (such as SiO 2 or Al 2 O 3 ), higher chalcogenides (e.g., GeSe), classical solid‐state cation conductors (e.g., AgI), and polymers (such as PVDF or PEO). In the simplest case, anodic oxidation of a metal electrode Me generating cations Me z + takes places when a positive voltage is applied between the anode and cathode (anodic oxidation)

Me \to {Me}^{z +} + {ze}^{-}

…”

Section: Solid‐state Electrochemistry In Memristive Switchesmentioning

confidence: 99%

Nanoparticle Dynamics in Oxide‐Based Memristive Devices

Tappertzhofen

Martino

Hofmann

2019

Physica Status Solidi (a)

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In microelectronics, a device's functionality is shaped by its interfaces. While classical semiconductor research aims for the preparation of nearly ideal interfaces, the emerging paradigm is that new functionalities can arise from interfaces with less perfection. Memristive devices rely on the control of such less‐perfect interfaces. They are the building blocks for a new range of applications, including new memory and logic architectures and neuromorphic computing. Research on memristive systems and applications demands an interdisciplinary approach across disciplines, including solid‐state physics, electrochemistry, and biochemistry. Advanced metrology is the key for better understanding and finally a better control of such interfaces and novel device technologies. Herein, the authors highlight such recent advances in characterization and the understanding of electrochemical reactions on the (sub‐) nanoscale and the dynamics of the nanoparticles and clusters involved during operation of memristive devices acting as a model system. The authors focus particularly on in operando real‐time monitoring of the memristive switching effect by transmission electron microscopy and a novel plasmon‐enhanced spectroscopy method.

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Ionic liquid-enhanced soft resistive switching devices

Abstract: Left: SEM showing dendrites bridging the electrodes. Right: Retention test showing a final on/off ratio of 700 after 10 000+ s. The addition of IL to switching matrix triggers non-volatile memory and 10-fold reduction of operating voltage.

Cited by 31 publications

References 68 publications

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer

Silver Nanofilament Formation Dynamics in a Polymer‐Ionic Liquid Thin Film by Direct Write

Nanoparticle Dynamics in Oxide‐Based Memristive Devices

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