Nanoparticle Dynamics in Oxide‐Based Memristive Devices

Abstract

In microelectronics, a device's functionality is shaped by its interfaces. While classical semiconductor research aims for the preparation of nearly ideal interfaces, the emerging paradigm is that new functionalities can arise from interfaces with less perfection. Memristive devices rely on the control of such less‐perfect interfaces. They are the building blocks for a new range of applications, including new memory and logic architectures and neuromorphic computing. Research on memristive systems and applications demands an interdisciplinary approach across disciplines, including solid‐state physics, electrochemistry, and biochemistry. Advanced metrology is the key for better understanding and finally a better control of such interfaces and novel device technologies. Herein, the authors highlight such recent advances in characterization and the understanding of electrochemical reactions on the (sub‐) nanoscale and the dynamics of the nanoparticles and clusters involved during operation of memristive devices acting as a model system. The authors focus particularly on in operando real‐time monitoring of the memristive switching effect by transmission electron microscopy and a novel plasmon‐enhanced spectroscopy method.

Ionic memristive effects on the nanometre scale in metal oxides: Understanding the process of valence change

“…The results open up prospects for the use of memristive effects in various technologies, such as neural networks, mnemonics, and energy-efficient memories. S. Tappertzhofen et al [18] focuses on the dynamics of filaments, nanoparticles, and clusters in a switching material. Furthermore, this highlights the progress made in employing voltage and current-based techniques like cyclic voltammetry to discern electrochemical reactions involved in resistive switching.…”

Role of an Interfacial Layer in Ta2O5‐Based Resistive Switching Devices for Improved Endurance and Reliable Multibit Operation

“…The detailed ISPP/ECC method has been previously reported. [21,26,27] XPS analyses were performed to examine the chemical binding states of the RS devices using an X-ray photoelectron spectrometer (Thermo Fisher Scientific Inc.). The elemental depth profile was analyzed using AES (ULVAC-PHI).…”

“…The external circuit control algorithm, so‐called ISPP/ECC, was applied to measure the 4 bit operation. The detailed ISPP/ECC method has been previously reported …”

“…[13][14][15][16][17] From the viewpoint of macroscopic control, there are few methods that can be used to achieve a precisely wanted resistance state. Previous studies have reported on the use of dopants in the RS media [18,19] and metal nanoparticles for the electric field concentration center [20,21] to improve the performance reliability of RRAM devices. However, these methods do not fulfill the high commercialization standards needed for RRAM devices.…”