Ionic Conductivity of AlN Containing Y&lt;SUB&gt;2&lt;/SUB&gt;O&lt;SUB&gt;3&lt;/SUB&gt; or Al&lt;SUB&gt;2&lt;/SUB&gt;O&lt;SUB&gt;3&lt;/SUB&gt; at 1173&amp;sim;1773 K

Yahagi, Masataka; Gotō, Kazuhiro

doi:10.2320/jinstmet1952.47.5_419

Cited by 9 publications

(1 citation statement)

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“…Yahagi et al measured the ionic conduction of Y2O3 or Al2O3 doped AlN ceramics at temperatures of 900 to 1500°C by using the d-c polarization and the electromotive force measurement. 9) They considered that Al 3+ ions are charge carriers for the electrical conduction. Groen et al performed the complex impedance analysis on several AlN ceramics at high temperatures of 575 to 1100°C.…”

Section: Introductionmentioning

confidence: 99%

Effects of adding Y2O3 on the electrical resistivity of aluminum nitride ceramics

Sakai

Katsuda

Masuda

et al. 2008

J. Ceram. Soc. Japan

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Electrical resistivity of AlN ceramics was examined with various amounts of Y2O3 within 0 to 4.8 mass%. The electrical resistivity at room temperature varied from 10 16 to 10 10 Ω·cm with different Y2O3 amounts and at sintering temperatures. In the typical samples sintered at 1900°C, a smaller amount of Y2O3 addition with 0.1 to 0.5 mass% gives the lowest electrical resistivity of 10 10 Ω·cm, whereas the higher amount of Y2O3 maintains high resistivity of more than 10 13 Ω·cm. The results derived from different analytical techniques such as impedance analysis, cathodoluminescence spectrum and microstructural analysis explain the importance of the oxygen concentration in the AlN grain for the electrical resistivity of AlN ceramics.

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Section: Introductionmentioning

confidence: 99%