2019
DOI: 10.1002/smll.201902065
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Ionic‐Activated Chemiresistive Gas Sensors for Room‐Temperature Operation

Abstract: extensively studied because of their remarkable advantages including low cost, simple fabrication, high response, and easy integration with electronic circuits. To ensure high response and reversible operation of chemiresistive gas sensors, high operating temperatures of 150-400 °C are inevitably required for adsorption and desorption of target molecules on and off of the sensing materials. [3,4] However, this high temperature degrades the sensor stability and lifetime due to thermally induced grain growth, wh… Show more

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Cited by 40 publications
(19 citation statements)
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References 33 publications
(33 reference statements)
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“…SiO 2 nanorods with approximate heights and diameters of 300 nm and 30 nm, respectively, were formed on the pre-patterned area between the Au electrodes by a glancing angle deposition technique. 34–36 Subsequently, ALD SnS nanoplates were formed by ALD of SnS. The SnS nanoplates were selectively grown on SiO 2 nanorods, even without a specific patterning process.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…SiO 2 nanorods with approximate heights and diameters of 300 nm and 30 nm, respectively, were formed on the pre-patterned area between the Au electrodes by a glancing angle deposition technique. 34–36 Subsequently, ALD SnS nanoplates were formed by ALD of SnS. The SnS nanoplates were selectively grown on SiO 2 nanorods, even without a specific patterning process.…”
Section: Resultsmentioning
confidence: 99%
“…The detailed procedure for the fabrication of the nanorods has been previously reported. 34–36 SnS was deposited in a travelling wave-type chamber by ALD from Sn(dmamp) 2 and H 2 S. ALD was performed at 240 °C under a nominal working pressure of 1 Torr. The ALD cycle consisted of Sn precursor feeding for 2 s, purging for 10 s, S precursor feeding for 2 s, and purging for 20 s. The details of the ALD process for SnS can be found in our previous reports.…”
Section: Methodsmentioning
confidence: 99%
“…To overcome these drawbacks, many researchers have studied metal oxide semiconductors (MOSs) due to their outstanding advantages, such as low cost, simplicity in fabrication, high sensitivity, easy integration with electronic circuits, and a large number of detectable gases [ 14 ]. Cutting-edge research has been spotlighted to apply the nanostructured materials [ 15 ], catalysts [ 16 ], heterojunctions [ 17 ], and UV activation [ 18 ] to the sensors for the enhancement of gas sensing performance.…”
Section: Introductionmentioning
confidence: 99%
“…Metal oxide semiconductor (MOS) based gas sensors, typically n‐type SnO 2 chemiresistors, are featured by their superb sensitivity, easy operation as well as low cost. [ 1,2 ] The increasing demand for ubiquitous and reliable gas detection is spurring the design of novel MOS materials that exhibit engineered chemical and electronic properties and that can enable new fabrication methods for low‐power‐consumption gas sensors. [ 3,4 ] Colloidal semiconductor nanocrystals (such as SnO 2 , [ 5 ] WO 3 , [ 6 ] ZnO, [ 7 ] and In 2 O 3 [ 8 ] ) offer an abundance of available surface area for chemical and electronic interactions, making them ideal receptors for gas molecules.…”
Section: Introductionmentioning
confidence: 99%