2003
DOI: 10.1016/s0168-583x(03)01726-9
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Ion scattering studies of the formation and thermal stability of the Ti–Al interface

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Cited by 3 publications
(3 citation statements)
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“…Ion-beam implantation/irradiation is an attractive method for the fabrication of waveguides and/or surface modification in many optical materials, including crystals, polymers, glassy materials, and semiconductors. Ion-beam irradiation is also a versatile method for surface or near-surface modification of crystalline materials in the electronics, magnetoelectronics, and optoelectronics industries. Recently, there has been considerable interest in modifying the optical properties of KTA and fabricating waveguides using ion-beam methods. ,, However, the information concerning variations of electronic properties and the structure of KTA surfaces subjected to external physiochemical effects, such as ion bombardment, is limited. The ion-beam irradiation-induced modifications of the surface structure may result in significant variations of optical transparency, refractive indices, and optical damage thresholds.…”
Section: Introductionmentioning
confidence: 99%
“…Ion-beam implantation/irradiation is an attractive method for the fabrication of waveguides and/or surface modification in many optical materials, including crystals, polymers, glassy materials, and semiconductors. Ion-beam irradiation is also a versatile method for surface or near-surface modification of crystalline materials in the electronics, magnetoelectronics, and optoelectronics industries. Recently, there has been considerable interest in modifying the optical properties of KTA and fabricating waveguides using ion-beam methods. ,, However, the information concerning variations of electronic properties and the structure of KTA surfaces subjected to external physiochemical effects, such as ion bombardment, is limited. The ion-beam irradiation-induced modifications of the surface structure may result in significant variations of optical transparency, refractive indices, and optical damage thresholds.…”
Section: Introductionmentioning
confidence: 99%
“…The significant rise in peak area after annealing at 400°C is attributed to the onset of a major change in the Fe/Ti/Al(1 0 0) structure, possibly due to diffusion of Al atoms to the surface, and movement of Fe and Ti into the Al substrate. We discuss below, and elsewhere [32,33], the stability of the Ti film on the Al(1 0 0) surface with no Fe deposition. The annealing experiments were stopped at 400°C because of the difficulty of cleaning the Al surface following the diffusion of Fe atoms deep into the bulk of the Al crystal.…”
Section: Ion Channeling Measurementsmentioning
confidence: 99%
“…The LEIS spectrum for the clean Al(1 0 0) surface is included for comparison, and shows only the dominant peak for ions scattered from Al atoms at the surface. Earlier experiments [16,33] showed that during Ti film growth the Al peak is slowly attenuated as the Ti peak area increases. For 2 ML of Ti, the Al peak area is about 60% of the peak area for the clean surface.…”
Section: Leis Measurementsmentioning
confidence: 99%