Ion projector distortion stability and wafer exposures under electronic alignment (“pattern lock”) conditions

Stringent error budgets for Next Generation Lithography masks require accurate pattern placement. Therefore, predictions of distortions induced during mask fabrication and usage are needed to optimize processing and exposure conditions. This paper focuses on the in-plane distortions resulting from pattern transfer during the fabrication of ion-beam projection lithography and electron-beam projection lithography stencil masks.

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“…This concept is illustrated in Eqs. (5) and (6) by allowing the relative stiffness to approach unity. While Eqs.…”

Section: Pattern Placement Errors 10k Ibm Falcon Layoutmentioning

confidence: 99%

<title>Pattern transfer distortions in IPL and EPL masks with pattern density gradients</title>

2000

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“…IMS continues to examine ways to minimize the aberrations due to spherical electrostatic focusing fields and dispersion of a polychromatic beam due to the initial spread in ion speeds in the plasma source [4][5][6][7]. Unfortunately the optimum conditions to minimize one form of aberration are not the same as those to minimize the other.…”

Section: 12mentioning

confidence: 99%

Nanoscience and nanotechnology in Europe

Tolles¹

1996

Nanotechnology

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During six months from April to September 1994, the author visited 42 laboratories in eight different European countries involved with research in nanostructures. The scientific thrusts point the way to new methods and properties of matter that may provide useful information. The potential applications of research in this field are likely to be found in information technology, sensors, and new materials, replete with the implications for many industrial interests. It is a suitable topic for the recently introduced 'focused technical assessment' activities of the Office of Naval Research Europe where the coordination for this effort was focused. Overviews of multidisciplinary efforts in fields of physics, electrical engineering, materials, chemistry, and biology are presented.

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Applications of Ion Microbeams Lithography and Direct Processing

Melngailis

2001

Handbook of VLSI Microlithography

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Ion projector distortion stability and wafer exposures under electronic alignment (“pattern lock”) conditions

Cited by 6 publications

References 1 publication

<title>Pattern transfer distortions in IPL and EPL masks with pattern density gradients</title>

<title>Pattern transfer distortions in IPL and EPL masks with pattern density gradients</title>

Nanoscience and nanotechnology in Europe

Applications of Ion Microbeams Lithography and Direct Processing

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