Ion projection lithography: status of tool and mask developments

Kaesmaier, Rainer; Ehrmann, Albrecht; Löschner, H.

doi:10.1016/s0167-9317(01)00506-8

Cited by 11 publications

(10 citation statements)

References 6 publications

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“…A beam of ions uniformly illuminates a large-area, robust, patterned stencil mask, and the transmitted beam is projected using electrostatic lenses, at an image reduction factor of one or two orders of magnitude, on to the workpiece surface. Working in a European consortium with combined expertise in ion projections optics, 8 stencil mask production, 18 and high contrast resist development, 19 IMS have succeeded in patterning at 50 nm resolution in parts of the exposure field, and 75 nm over the full field of 12.5 × 12.5 sq mm, 19 in a single beam exposure. The same group has also developed a variation to IPL which they call ion projection direct structuring (IPDS).…”

Section: Ion Projection Lithography (Ipl)mentioning

confidence: 99%

Ion Beam Lithography and Nanofabrication: A Review

et al. 2005

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To overcome the diffraction constraints of traditional optical lithography, the next generation lithographies (NGLs) will utilize any one or more of EUV (extreme ultraviolet), X-ray, electron or ion beam technologies to produce sub-100 nm features. Perhaps the most under-developed and under-rated is the utilization of ions for lithographic purposes. All three ion beam techniques, FIB (Focused Ion Beam), Proton Beam Writing (p-beam writing) and Ion Projection Lithography (IPL) have now breached the technologically difficult 100 nm barrier, and are now capable of fabricating structures at the nanoscale. FIB, p-beam writing and IPL have the flexibility and potential to become leading contenders as NGLs. The three ion beam techniques have widely different attributes, and as such have their own strengths, niche areas and application areas. The physical principles underlying ion beam interactions with materials are described, together with a comparison with other lithographic techniques (electron beam writing and EUV/X-ray lithography). IPL follows the traditional lines of lithography, utilizing large area masks through which a pattern is replicated in resist material which can be used to modify the near-surface properties. In IPL, the complete absence of diffraction effects coupled with ability to tailor the depth of ion penetration to suit the resist thickness or the depth of modification are prime characteristics of this technique, as is the ability to pattern a large area in a single brief irradiation exposure without any wet processing steps. p-beam writing and FIB are direct write (maskless) processes, which for a long time have been considered too slow for mass production. However, these two techniques may have some distinct advantages when used in combination with nanoimprinting and pattern transfer. FIB can produce master stamps in any material, and p-beam writing is ideal for producing three-dimensional high-aspect ratio metallic stamps of precise geometry. The transfer of large scale patterns using nanoimprinting represents a technique of high potential for the mass production of a new generation of high area, high density, low dimensional structures. Finally a cross section of applications are chosen to demonstrate the potential of these new generation ion beam nanolithographies.

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Section: Ion Projection Lithography (Ipl)mentioning

confidence: 99%

Ion Beam Lithography and Nanofabrication: A Review

et al. 2005

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“…Other forms of ion irradiation facilities have been developed, which are capable of irradiating over large areas or at high energies, but generally not both. One form of ion projection lithography [12] uses medium energy (typically 100 keV) ions, such as protons, He + , Ar + , to uniformly illuminate a robust, patterned stencil mask [13]. The transmitted beam is projected and focused with electrostatic lenses on the sample surface over the full field of 12 × 12 mm 2 .…”

Section: Patterning Psi Bragg Reflectors Over Large Wafer Areasmentioning

confidence: 99%

Fabrication of large-area patterned porous silicon distributed Bragg reflectors

Mangaiyarkarasi¹,

Sheng²,

Breese³

et al. 2008

Opt. Express

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A process to fabricate porous silicon Bragg reflectors patterned on a micrometer lateral scale over wafer areas of several square centimeters is described. This process is based on a new type of projection system involving a megavolt accelerator and a quadrupole lens system to project a uniform distribution of MeV ions over a wafer surface, which is coated with a multilevel mask. In conjunction with electrochemical anodisation, this enables the rapid production of high-density arrays of a variety of optical and photonic components in silicon such as waveguides and optical microcavities for applications in high-definition reflective displays and optical communications.

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“…A 4× reduction ion optics system has been developed for PDT, in which a printing area of 12.5×12.5 mm 2 is designed to be patterned on to the wafer. To obtain a full image of the whole wafer area, each printing area is stitched one‐by‐one via synchronization of the beam and wafer moments 20. The coaxial multicusp ion source used in PDT is also developed by LBNL, and has a very low energy spread at 1 eV FWHM (full‐width at half‐maximum) level.…”

Section: Ipl Systemsmentioning

confidence: 99%

“…Most of the IPL systems use open stencil masks for pattern transformation as indicated by many investigators 5. 6, 20 In the stencil mask, patterns are etched on the metal foils. This type of mask has excellent contrast because the ions are not affected by passing through the open hole before striking on the resist.…”

Section: Projection Masks and Resistsmentioning

confidence: 99%

Recent Developments in Nanofabrication Using Ion Projection Lithography

Tseng

2005

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Ion projection lithography (IPL) is an emerging technology and a major candidate for the next-generation lithography (NGL) designed to complement and supplement current optical lithographic techniques for future chip manufacturing. In this Review, the recent developments of IPL technology are examined with an emphasis on its ability to fabricate a wide variety of nanostructures for the semiconductor industry. Following an introduction of the uniqueness and strength of the technology, the basics of ion-source development and ion-target interactions with and without chemical enhancement are presented. The developments in equipment systems, masks, and resists are subsequently studied. The resolution of printed nanostructures and the corresponding throughput of the current system are assessed for NGL. Finally, concluding remarks are presented to summarize the strengths and weaknesses of the current technology and to suggest the scope for future improvement.

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Ion projection lithography: status of tool and mask developments

Cited by 11 publications

References 6 publications

Ion Beam Lithography and Nanofabrication: A Review

Ion Beam Lithography and Nanofabrication: A Review

Fabrication of large-area patterned porous silicon distributed Bragg reflectors

Recent Developments in Nanofabrication Using Ion Projection Lithography

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