Graphene has excellent
electrical, optical,
thermal, and mechanical properties that make it an ideal optoelectronic
material. However, it still has some problems, such as a very low
light absorption rate, which means it cannot meet the application
requirements of high-performance optoelectronic devices. Here, we
produce a high-responsivity photodetector based on a monolayer graphene/RbAg4I5 composite nanostructure. With the aid of poly(methyl
methacrylate), we suspend the monolayer graphene on a hollow carving
groove with a width of 100 μm. A RbAg4I5 film evaporated on the back of the graphene causes the composite
nanostructure to generate a large photocurrent under periodic illumination.
Experimental results show that the dissociation and recombination
of ion–electron bound states (IEBSs) are responsible for the
excellent photoresponse. The device has very high (>1 A W–1) responsivity in wide-band illumination wavelength from 375 nm to
808 nm, especially at 375 nm, where it shows a responsivity of up
to ∼5000 A W–1. We designed the dimensions
of the carving groove to allow the light spot to cover the entire
groove, and we cut the graphene sheet to match the length of the carving
groove. With the structural optimizations, the energy of light can
be used more efficiently to dissociate the IEBSs, which greatly improves
the photoresponse of optoelectronic devices based on the proposed
monolayer graphene/RbAg4I5 composite nanostructure.