Ion layer gas reaction (ILGAR)—conversion, thermodynamic considerations and related FTIR analyses

Fischer, Ch.‐H.; Muffler, H.-J.; Bär, M.; Fiechter, S.; Leupolt, Beate; Lux‐Steiner, M.C.

doi:10.1016/s0022-0248(02)00949-1

Cited by 15 publications

(8 citation statements)

References 13 publications

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“…However, the IR bands observed at 400 cm −1 and 561-586 cm −1 for the CD-QDs were clearly absent before introduction of the CDs and are consistent with the ZnO 14 and Zn-O stretching modes, 15 respectively. The spectral data ͑not shown͒ showed that both the QD and CD-QD samples displayed the IR band at 332 cm −1 thought to be due to ZnS, whereas the ZnS-related band at 357 cm −1 observed for CD-QDs was shifted from the 366 cm −1 band position observed for the QDs alone.…”

Section: Cyclodextrin Driven Hydrophobic/hydrophilic Transformation Osupporting

confidence: 56%

Cyclodextrin driven hydrophobic∕hydrophilic transformation of semiconductor nanoparticles

Feng

Ding

Tucker

et al. 2005

Applied Physics Letters

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Section: Cyclodextrin Driven Hydrophobic/hydrophilic Transformation Osupporting

confidence: 56%

Cyclodextrin driven hydrophobic∕hydrophilic transformation of semiconductor nanoparticles

Feng

Ding

Tucker

et al. 2005

Applied Physics Letters

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“…In2S3 layers were deposited by ILGAR [24,25] onto c-Si wafers without additional treatment of the c-Si substrates. InCl3 or In(acac)3 precursor salt was dissolved into ethanol solvent to obtain a solution of 25 mM.…”

Section: Methodsmentioning

confidence: 99%

“…ILGAR is a sequential and cyclic method of depositing highly conformal In2S3 layers on different substrates [24,25]. In2S3 layers can be deposited from InCl3 or In(OCCH3CHOCCH3)3 to obtain Cl-free and Cl-containing layers [26].…”

Section: Introductionmentioning

confidence: 99%

Role of Cl on Diffusion of Cu in In2S3 Layers Prepared by Ion Layer Gas Reaction Method

et al. 2015

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Ion layer gas reaction (ILGAR) method allows for deposition of Cl-containing and Cl-free In2S3 layers from InCl3 and In(OCCH3CHOCCH3)3 precursor salts, respectively. A comparative study was performed to investigate the role of Cl on the diffusion of Cu from CuSCN source layer into ILGAR deposited In2S3 layers. The Cl concentration was varied between 7 and 14 at.% by varying deposition parameters. The activation energies and exponential pre-factors for Cu diffusion in Cl-containing samples were between 0.70 to 0.78 eV and between 6.0 × 10 −6 and 3.2 × 10 −5 cm 2 /s. The activation energy in Cl-free ILGAR In2S3 layers was about three times less compared to the Cl-containing In2S3, and the pre-exponential constant six orders of magnitude lower. These values were comparable to those obtained from thermally evaporated In2S3 layers. The residual Cl-occupies S sites in the In2S3 structure leading to non-stoichiometry and hence different diffusion mechanism for Cu compared to stoichiometric Cl-free layers.

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“…The main difference between the two ZnO films lies in the presence of residual Zn(OH) 2 in the ILGAR ZnO, which originates from the chemical deposition via Zn(OH) 2 [7]. Based on this knowledge we developed a model to explain the observation of sulfate.…”

Section: Zno Buffer Layers On Cigssementioning

confidence: 99%

Analysis of Zinc Compound Buffer Layers in Cu(In, Ga)(S, Se)₂ Thin Film Solar Cells by Synchrotron-Based Soft X-Ray Spectroscopy

et al. 2003

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Zinc-based buffer layers like ZnSe, ZnS, or wet-chemically deposited ZnO on Cu(In,Ga)(S,Se) 2 absorber materials (CIGSSe) have yielded thin film solar cell efficiencies comparable to or even higher than standard CdS/CIGSSe cells. However, little is known about surface and interface properties of these novel buffer layers. In this contribution we characterize the specific chemical environment at the absorber/buffer-interface using X-ray Emission Spectroscopy (XES) and Photoelectron Spectroscopy (PES) in a complementary way. Evidence of intermixing and chemical reactions is found for different buffer materials and deposition methods.

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Ion layer gas reaction (ILGAR)—conversion, thermodynamic considerations and related FTIR analyses

Cited by 15 publications

References 13 publications

Cyclodextrin driven hydrophobic∕hydrophilic transformation of semiconductor nanoparticles

Cyclodextrin driven hydrophobic∕hydrophilic transformation of semiconductor nanoparticles

Role of Cl on Diffusion of Cu in In2S3 Layers Prepared by Ion Layer Gas Reaction Method

Analysis of Zinc Compound Buffer Layers in Cu(In, Ga)(S, Se)₂ Thin Film Solar Cells by Synchrotron-Based Soft X-Ray Spectroscopy

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Ion layer gas reaction (ILGAR)—conversion, thermodynamic considerations and related FTIR analyses

Cited by 15 publications

References 13 publications

Cyclodextrin driven hydrophobic∕hydrophilic transformation of semiconductor nanoparticles

Cyclodextrin driven hydrophobic∕hydrophilic transformation of semiconductor nanoparticles

Role of Cl on Diffusion of Cu in In2S3 Layers Prepared by Ion Layer Gas Reaction Method

Analysis of Zinc Compound Buffer Layers in Cu(In, Ga)(S, Se)2 Thin Film Solar Cells by Synchrotron-Based Soft X-Ray Spectroscopy

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Product

Resources

About

Analysis of Zinc Compound Buffer Layers in Cu(In, Ga)(S, Se)₂ Thin Film Solar Cells by Synchrotron-Based Soft X-Ray Spectroscopy