Ion irradiation induced defects in epitaxial GaAs layers

Arpatzanis, N.; Vlastou, R.; Konstantinidis, G.; Assmann, W.; Papastamatiou, M.; Gazis, E. N.; Papaioannou, G.

doi:10.1016/s0038-1101(97)00221-9

Cited by 7 publications

(7 citation statements)

References 15 publications

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“…Samples with doping levels ranging from 10 15 to 10 18 cm ± ±3 were used in order to determine the dependence of the damage factor on the background donor concentration [6,13]. Samples with doping levels ranging from 10 15 to 10 18 cm ± ±3 were used in order to determine the dependence of the damage factor on the background donor concentration [6,13].…”

Section: Methodsmentioning

confidence: 99%

“…a-particle irradiation generates traps in GaAs some of which are similar to those introduced by electron and heavy ion irradiation [6,13,14]. Therefore, the investigation of a-particle irradiation degradation of GaAs MESFETs can be considered to be of significant importance for the basic research in understanding the physical mechanisms of the material degradation as well as the applied research on the device engineering.…”

Section: Introductionmentioning

confidence: 99%

“…The drain current DLTS spectra revealed the presence of one trap E1 before irradiation and four traps labeled Ea1 to Ea4 [6] after irradiation. The drain current DLTS spectra revealed the presence of one trap E1 before irradiation and four traps labeled Ea1 to Ea4 [6] after irradiation.…”

Section: Electron Trap Introductionmentioning

confidence: 99%

“…The drain current DLTS spectra revealed the presence of one trap E1 before irradiation and four traps labeled Ea1 to Ea4 [6] after irradiation. So before irradiation only the EL2 trap was detected while after irradiation the detected traps have signatures that lie close to the well known I1, I2, I3 and I5 traps [20] as well as others [6,8]. 5a.…”

Section: Electron Trap Introductionmentioning

confidence: 99%

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On the ?-Particle Irradiation Effects in MESFETs

Papastamatiou

Arpatzanis

Papaioannou

et al. 2000

phys. stat. sol. (a)

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a-particle irradiation investigations have been carried out on various structure GaAs metal±semiconductor field-effect transistors. The device characteristics were measured before irradiation and after a-particle irradiation with fluences ranging from 5 Â 10 10 to 3 Â 10 12 cm ± ±2 . The carrier removal rate was found to be independent of the doping level as determined from Schottky diodes and device parameters. Five traps were found to be introduced by irradiation. Two of them were found to determine the temperature dependence of drain current. The threshold voltage shift was modeled taking into account the degradation of the channel carrier removal, the gate barrier height and the channel±substrate space charge region width.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Electron Trap Introductionmentioning

confidence: 99%

Section: Electron Trap Introductionmentioning

confidence: 99%

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On the ?-Particle Irradiation Effects in MESFETs

Papastamatiou

Arpatzanis

Papaioannou

et al. 2000

phys. stat. sol. (a)

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“…The absorption bands leveled at 0.88-0.90, 0.91, and 0.99 eV are possibly related to the F-series defect that correlate to the recoiled Ga and As atoms displaced during implantation. 15 The peaks leveled at 1.075 eV are attributed to the n-type electron trap E3. 16 The defect leveled at 1.11 eV with an E a of 0.32 eV is identified as I5 with a complex nature, which is thought to be formed by association between primary formed defects (V As ϪAs I or the Frankel pairs͒ and contaminating impurities.…”

Section: Communications Optical Transmission Spectroscopy Of Semi-insmentioning

confidence: 99%