Articles you may be interested inAnalysis of terahertz pulses from large-aperture biased semi-insulating and arsenic-ion-implanted GaAs antennas J. Appl. Phys.
The photocurrent analysis of a metal-semiconductor-metal photoconductors (MSM-PD) with interdigitated electrodes fabricated on silicon-ion-implanted Borosilicate glass (SiO2:Si) substrate is reported. The dark-and photo-current of the Si02:Si1 MSM-PD with fmger width and spacing of 5 tm are 72 pA and 447 pA at bias of 50 Volts, which corresponds to a photocurrent gain (IphotcJIdk) of 5.2 and a responsivity of 0.38 tA/W, as measured under the injection power of 25mW at 5 14.5 nm. The decreasing trend in photocurrent response versus wavelength reveals that the absorption coefficient ofthe SiO2:Si becomes smaller at longer wavelengths.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.