Ion-ion recombination in electronegative gases

Jungblut, H.; Hansen, D.; Schmidt, Werner F.

doi:10.1109/14.90293

Cited by 15 publications

(4 citation statements)

References 9 publications

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“…Gas pressure plays a crucial role in determining the conduction current on the gas side. With the increase in gas pressure, the ion pair generation rate increases, the recombination coefficient increases, and the mobility of ions decreases [7][8][9]. The impact of gas pressure on surface charge density is depicted in Figure 3.…”

Section: Simulation Resultsmentioning

confidence: 99%

“…where ∂n IP ∂t is the ion pair generation rate; k r is the recombination coefficient; b + and b − are the positive and negative ions' mobility; and D + and D − are their diffusion coefficients. ∂n IP ∂t , k r , and b ± are related to the gas pressure, which can be obtained from [7][8][9].…”

Section: Simulation Model Of Charge Distributionmentioning

confidence: 99%

“…Nowadays, it is widely accepted that the charge distribution at the gas-solid interface is decided by volume conductivity, gas Energies 2024, 17, 2739 2 of 11 conductivity, and surface conductivity [4][5][6]. The ion mobility that varies with gas pressure will significantly affect the dark current of the gas side [7][8][9], thereby the investigation of the effect of gas pressure on charge distribution on the gas-solid interface is important for the design of DC GIS. Zavattoni et al [10,11] measured the dark current with a parallel electrode system and found that the dark current increased with gas pressure.…”

Section: Introductionmentioning

confidence: 99%

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Impact of Pressure and Temperature on Charge Accumulation Characteristics of Insulators in Direct-Current Gas-Insulated Switchgear

Xu,

Li,

Zhu

et al. 2024

Energies

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Direct-current gas-insulated switchgear (DC GIS) is an important device for promoting the lightweight and compact design of offshore wind power platforms. Gas pressure and temperature gradients are crucial factors that must be considered during the design process of the DC GIS. In this study, the multi-physics coupling model of basin insulators considering surface charge accumulation was established, and the corresponding real-sized insulator surface charge measurement platform was constructed. The effects of gas pressure and temperature gradient on the surface charge accumulation characteristics were investigated, respectively. The results show that the effect of gas pressure on the surface charge distribution characteristics depends on the dominant mode of surface charge. When volume conduction is dominant, the effect of gas pressure on the surface charge is negligible. However, when gas conduction is dominant, the accumulation of a uniform charge pattern on the insulator surface increases with the rise in gas pressure. Furthermore, due to gas convection, the temperature of the upper part of the DC GIS is significantly higher than that of the lower part, which leads to a temperature difference between the upper and lower surfaces of the insulator. The charge density on the insulator upper surface near the central conductor rises with the increase in load current.

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Section: Simulation Resultsmentioning

confidence: 99%

Section: Simulation Model Of Charge Distributionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Impact of Pressure and Temperature on Charge Accumulation Characteristics of Insulators in Direct-Current Gas-Insulated Switchgear

Xu,

Li,

Zhu

et al. 2024

Energies

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“…Because the absorption coefficient of heat depends linearly upon the gas pressure, the thermal radiative cooling process is enhanced with the increase in gas pressure [17] , which leads to an higher voltage recovery rate. The higher the gas pressure, the higher the recombination probability between the charged particles [18] . Due to the stronger electronegativity of SF 6 , at a higher gas pressure the probability of attachment of electrons onto SF 6 molecules is also higher [19] .…”

Section: Effect Of Gas Pressure On the Rate Of Voltage Recoverymentioning

confidence: 99%

A Repetitive Nanosecond Pulse Source for Generation of Large Volume Streamer Discharge

Tao

Zhang

Gao

et al. 2008

Plasma Sci. Technol.

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Using a unipolar pulse with the rise time and the pulse duration in the order of microsecond as the primary pulse, a nanosecond pulse with the repetitive frequency of several kilohertz is generated by a spark gap switch. By varying both the inter-pulse duration and the pulse frequency, the voltage recovery rate of the spark gap switch is investigated at different working conditions such as the gas pressure, the gas composition as well as the bias voltage. The results reveal that either increase in gas pressure or addition of SF6 to the air can increase the voltage recovery rate. The effect of gas composition on the voltage recovery rate is discussed based on the transferring and distribution of the residual space charges. The repetitive nanosecond pulse source is also applied to the generation of large volume, and the discharge currents are measured to investigate the effect of pulse repetition rate on the large volume streamer discharge.

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Electron Interactions with Cl2, CCl2F2, BCl3, and SF6

Christophorou

Olthoff

2004

Fundamental Electron Interactions With Plasma Processing Gases

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Ion-ion recombination in electronegative gases

Cited by 15 publications

References 9 publications

Impact of Pressure and Temperature on Charge Accumulation Characteristics of Insulators in Direct-Current Gas-Insulated Switchgear

Impact of Pressure and Temperature on Charge Accumulation Characteristics of Insulators in Direct-Current Gas-Insulated Switchgear

A Repetitive Nanosecond Pulse Source for Generation of Large Volume Streamer Discharge

Electron Interactions with Cl2, CCl2F2, BCl3, and SF6

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