Ion-induced Luminescence of Alumina with Time-resolved Spectroscopy.

Photoluminescence properties of heat-treated porous alumina films formed in oxalic acid

“…6 shows the photoluminescence Table 1 Results of analysis of the photoluminescence spectra of oxalic acid alumina films with Gaussian fitting at l exc ¼ 330 nm. There are enough data on luminescence centers in crystalline alumina [25][26][27][28]. Consequently, it can be interesting to compare the luminescence centers existing in crystalline alumina with the ones in anodic alumina films formed in oxalic acid.…”

“…According to Ref. [25], luminescence peak at 420 nm can be referred to F + -center. A description of typical luminescence centers of crystalline alumina in the wavelength range of 200-600 nm is given in Table 3 [25].…”

“…[25], luminescence peak at 420 nm can be referred to F + -center. A description of typical luminescence centers of crystalline alumina in the wavelength range of 200-600 nm is given in Table 3 [25]. As one can see, the luminescence centers with a lifetime of about 0.25 ns are absent in the crystalline alumina; thereby these centers are assumed to arise due to the presence of carboxylate ions in anodic alumina films.…”

Production behavior of irradiation defects in α-alumina and sapphire under ion beam irradiation

“…By taking into account the lifetimes of F þ (2P) and F 0 ( 3 P), an explanation may be given as follows. In the case of F þ (2P), the lifetime in the order of 10 À9 s [10,11] is too short to be involved in the defect reactions especially at lower temperatures. On the other hand, the lifetime of the F 0 ( 3 P) in the triplet state is considerably longer (25 ms [11]), and the defect reactions are likely to affect and reduce the luminescence yield even at lower temperatures, as observed in the present study.…”

“…Following the measurement of lithium ceramics, the present study deals with a-alumina and sapphire in which the F-type centers are produced [7][8][9][10][11]. These ceramics are often used as refractory oxide dielectric materials in the radiation field, it is also needed to know the dynamic behavior of the irradiation defects.…”