Ion-implanted structures and doped layers in diamond

Prins, Johan F.

doi:10.1016/0920-2307(92)90001-h

Cited by 130 publications

(11 citation statements)

References 162 publications

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“…Therefore, in our case we infer a similar lattice expansion of 0.6% in the surface layer for the highest fluence. Volume expansion after ion implantation has been reported before and explained by the amorphization of the material and the formation of vacancies and interstitials [44][45][46]. Our results indicate that the lattice expansion is more important for the surface layers, where damage and amorphization are smaller.…”

Section: Raman Spectrasupporting

confidence: 75%

Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing

Agulló-Rueda

Gordillo

Ynsa

et al. 2017

Carbon

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We have studied the radiation damage in diamond as a function of layer depth upon self-ion implantation with 9-MeV carbon ions and its recovery after annealing at 1000 • C. Raman and photoluminescence spectra show substantial damage of the lattice, namely, amorphization, neutral vacancies, and interstitial defects. Damage is maximum in the stopping layer at a depth of 4 µm. After annealing there is some recovery of the lattice, but the residual damage increases with fluence, up to about 2 × 10 16 ions/cm 2. At this fluence the stopping layer becomes highly disordered and does not heal with annealing. Surprisingly, for higher fluence values, of about 5 × 10 16 ions/cm 2 , there is almost no residual damage. After full amorphization is reached, the layers appear to recrystallize by solid phase epitaxy (SPE), using the pristine diamond layers underneath as a template. These results prove that graphitization of diamond after annealing can be avoided in deeply buried layers, implanted at fluences much higher than expected. High fluences, in fact, can lead to high quality diamond layers. If SPE can be confirmed, it would have a great interest for diamond device applications, as it allows for higher doping levels. ion irradiation 9-MeV C ions micro-spectroscopy 10 μm stopping layer Figure 1: Scheme of the experimental procedure. A diamond crystal was implanted with 9-MeV 12 C 3+ ions at different fluences and then annealed at 1000 • C for 1 h. Optical microspectroscopy measurements were performed both after implantation and after annealing. The inset shows an actual transmission light micrograph of an implanted stripe as seen from the top sample surface (fluence 130 × 10 14 ions/cm 3).

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Section: Raman Spectrasupporting

confidence: 75%

Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing

Agulló-Rueda

Gordillo

Ynsa

et al. 2017

Carbon

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“…Subsequent annealing to higher temperatures resulted in improved conductivity properties of the diamond [124]. Fontaine et al, demonstrated an in-situ annealing of boron implanted single crystal diamond [125], which showed good electrical properties.…”

Section: Other Ionsmentioning

confidence: 99%

“…Low doses (below graphitization limit) of boron were implanted into a diamond held at low temperature followed by a rapid annealing [124].…”

Section: Other Ionsmentioning

confidence: 99%

Novel Single Photon Emitters Based on Color Centers in Diamond

Aharonovich¹,

Castelletto²,

Prawer³

2011

AIP Conference Proceedings

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Exploitation of emerging quantum technologies requires efficient fabrication of key building blocks. Single photon sources are one of these fundamental constituents that are presently pushing the bounds of existing materials and fabrication techniques. Color centers in diamond are very attractive in this respect since they are the only photostable solid-state single photon emitters operating at room temperature known to date.The Nitrogen-Vacancy (NV) complex is one example of such an optical center and has been subject to intensive research due to the availability of optical readout of its individual electronic spin state. However, the NV center has fundamental limitations: strong phonon coupling of the excited state which results in a broad photoluminescence spectrum (~ 100 nm) of which the zero-phonon line makes up only 4%. Emission of single photons in the zero phonon line is then extremely weak, typically on the order of a few thousands of photons per second. Such count rates are insufficient for the realization of advanced quantum information processing protocols.To move beyond the limitations of the NV there is an emerging need to identify and fabricate novel diamond based single photon emitters with improved photo-physical characteristics. Development of such emitters is the main goal of this thesis.We first concentrate on the recent progress in materials science and fabrication techniques of high quality nanodiamond crystals. We demonstrate the ability to grow high quality, submicron sized diamond crystals with a control over their final size and density using a microwave assisted chemical vapor deposition.We then study two methodologies to engineer diamond based single photon emitters in the grown nanodiamonds. In the first, nickel is implanted into the substrate onto which the nanocrystals are subsequently grown. During the diamond growth, the substrate is slightly etched and the nickel atoms diffuse and incorporate into the growing crystals. In the second we employ direct ion implantation of nickel into already deposited individual diamond nanocrystals. Optical and correlation spectroscopy measurements reveal that these methodologies are effective to fabricate nickel related single photon emitters, with zero phonon lines centered in the near infra-red and a short excited state lifetime (~3 ns).ii Furthermore, the ability of diamond to host various luminescence centers prompted the discovery of a new class of ultra bright single photon emitters. These new emitters found in diamond crystals grown on sapphire substrate and assigned to chromium, which is present in the substrate and incorporated into the crystal during the growth. Nanodiamonds hosting these centers deliver outstanding performance such as narrow photoluminescence in the near infra-red and ultra bright single photon emission with count rate of ~ 3.2×10 6 counts/s -the brightest single photon source known to date.Importantly, some of the emitters exhibit a photon statistics without any photon bunching at saturation, indicating a two-...

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“…After the advent of low pressure gas phase synthesis (CVD) of diamond thin films [38][39][40], numerous noteworthy and path breaking advances have successively taken place [1][2][3][4][5][6][7][8][9][10][11][41][42][43][44][45][46][47][48][49]; these advances have made the following possible: (i) tremendous increase in diamond thin film growth rates, (ii) substrate selectivity and large area deposition, (iii) low temperature deposition, (iv) single crystalline thin film synthesis, (v) phase mixture diamond nanocomposite thin film deposition, (vi) doped diamond thin film synthesis, and so forth. At present various CVD methods such as hot filament, direct current (DC) plasma, radio frequency (RF) plasma, microwave plasma, electron cyclotron resonance (ECR) microwave plasma CVD, and so forth, and their hybrids are being used to synthesize diamond thin films with highly consistent and desired properties.…”

Section: Cvd Of Diamond Thin Filmsmentioning

confidence: 99%

A Brief Review on theIn SituSynthesis of Boron-Doped Diamond Thin Films

Srikanth

Kumar

2012

International Journal of Electrochemistry

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Diamond thin films are well known for their unsurpassed physical and chemical properties. In the recent past, research interests in the synthesis of conductive diamond thin films, especially the boron-doped diamond (BDD) thin films, have risen up to cater to the requirements of electronic, biosensoric, and electrochemical applications. BDD thin films are obtained by substituting some of the sp 3 hybridized carbon atoms in the diamond lattice with boron atoms. Depending on diamond thin film synthesis conditions, boron doping routes, and further processing steps (if any), different types of BDD diamond thin films with application-specific properties can be obtained. This paper will review several important advances in the synthesis of boron-doped diamond thin films, especially those synthesized via gas phase manipulation.

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Ion-implanted structures and doped layers in diamond

Cited by 130 publications

References 162 publications

Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing

Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing

Novel Single Photon Emitters Based on Color Centers in Diamond

A Brief Review on theIn SituSynthesis of Boron-Doped Diamond Thin Films

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