Ion-implanted<i>P</i>-channel GaAs MESFET using Schottky barrier height tailoring

Baier, S.M.; Lee, G.Y.; Chung, Hyun-Woo; Fure, B.J.; Cirillo, N.C.

doi:10.1049/el:19870157

Electronics Letters

1987

DOI: 10.1049/el:19870157

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Ion-implantedP-channel GaAs MESFET using Schottky barrier height tailoring

S.M. Baier

G.Y. Lee

Hyun-Woo Chung

et al.

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Cited by 10 publications

(1 citation statement)

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“…High speed performance and reliability of these types of devices are directly related to the ohmic contact formed to the p-type base. Other new devices with p-type layers are p-channel heterostructure FETs, which can be combined with n-channel heterostructure FETs to form the complementary circuits (5,6); and the complementary ion-implanted GaAs MESFETs (CMES), which are also attracting attention as components of ultra-high performance GaAs integrated circuits (7). For all of these p-channel FETs, high speed, low power dissipation and good noise immunity are greatly dependent on the quality of ohmic contact to p-type GaAs.…”

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Rapid Thermal Alloyed Ohmic Contacts to p‐Type GaAs

Kalkur

Araújo

1989

J. Electrochem. Soc.

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A systematic study of Au/Zn/Au ohmic contacts to Be‐implanted p‐type normalGaAs by rapid thermal alloying is presented. The processing conditions, such as zinc composition and temperature‐time cycle, are optimized. For the peak hole concentration, about Nnormala=3×1017 cm−3 , contact resistivity as low as 3.3×10−6 normalΩ cm2 is obtained. The microstructure of the contact is investigated using SEM, EDXA, AES, and XRD measurements in order to explore the correlation of the structural information with electrical characteristics represented by contact resistivity. It is found that during alloying, the normalGaAs layer near the interface is decomposed due to Ga and As outdiffusion, enhanced by Au interdiffusion. Ga diffuses to the contact surface in a much larger extent than As does. The interaction of Au and Ga, which produces α‐normalAuGa phase, plays a key role in the formation of alloyed ohmic contacts to normalGaAs . The rapid thermal processing technique provides better control of Au‐Ga reaction, as well as limited dissolution of the normalGaAs surface, which makes the optimum ohmic contact possible. The present work has demonstrated that rapid thermal alloying offers obvious advantages over the conventional furnace alloying process, including lower contact resistivity, better interface morphology by limiting interfacial liquid phase reaction, and controlled shallow penetration depth.

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Rapid Thermal Alloyed Ohmic Contacts to p‐Type GaAs

Kalkur

Araújo

1989

J. Electrochem. Soc.

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Control of GaAs‐MESFET breakdown voltage by Shannon implantation

Kumar

Sarkar

2007

Physica Status Solidi (a)

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The dependence of GaAs‐MESFET gate‐drain breakdown voltage on gate‐Schottky barrier enhancement by Shannon‐implantation is analyzed. The analytical results show that the breakdown voltage can be increased by increasing the Shannon‐implant dose. However, the tolerable limit of hole accumulation under the gate does not allow the breakdown voltage to be increased beyond a certain limit. The breakdown voltage limit is higher for a channel of lighter doping. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Use of pt gate metallization to reduce gate leakage current in GaAs MESFETs

Ren

Emerson

Pearton

et al. 1991

JEM

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Ion-implantedP-channel GaAs MESFET using Schottky barrier height tailoring

Cited by 10 publications

References 2 publications

Rapid Thermal Alloyed Ohmic Contacts to p‐Type GaAs

Rapid Thermal Alloyed Ohmic Contacts to p‐Type GaAs

Control of GaAs‐MESFET breakdown voltage by Shannon implantation

Use of pt gate metallization to reduce gate leakage current in GaAs MESFETs

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