Control of GaAs‐MESFET breakdown voltage by Shannon implantation

Abstract

The dependence of GaAs‐MESFET gate‐drain breakdown voltage on gate‐Schottky barrier enhancement by Shannon‐implantation is analyzed. The analytical results show that the breakdown voltage can be increased by increasing the Shannon‐implant dose. However, the tolerable limit of hole accumulation under the gate does not allow the breakdown voltage to be increased beyond a certain limit. The breakdown voltage limit is higher for a channel of lighter doping. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)