Ion implantation of silicon carbide

Appearance of local strain fields and high electrical conductivity of macro-defects in P+-implanted 4H-SiC

“…However, it is well known that damage resulting from lattice defects such as vacancies and interstitials are induced in the SiC crystal during implantation. 5,6 In order to recover the damage in the implanted region and activate implanted impurities electrically, high-temperature implantation at several hundred degrees Celsius and postimplantation annealing at 1500 C and above are usually conducted. However, it is difficult to remove the lattice defects completely, and they often generate extended defects.…”

Defects annealing in 4H–SiC epitaxial layer probed by low temperature photoluminescence

“…Defects are introduced during devices processing steps [3,4] as irradiation, that is often used for doping, lifetime control and etching of the material. The drawback of this technique is that irradiation creates a great deal of lattice damage as vacancies, interstitials, complexes and impurity-radiation defects complexes [5,6].…”

High energy N+ ion implantation in 4H–SiC

“…Several studies report on the formation and evolution of implantation-induced defects and their influence on the electrical properties of the material [4][5][6][7][8], however nitrogen implantation at high energy has received little attention.…”