Ion implantation in semiconductors

Abstract

-c h a r g e c o n t r o l ' i n MOS s t r u c t u r e s f o r t h r e s h o l d s h i f t , a u t o r e g i s t r a t i o n , and complementary w e l l s and 2) d i s t r i b u t i o n cont r o l i n microwave and bipolar structures. Another f e a t u r e t h a t has n o t been e x t e n s i v e l y e x p l o i t e d i s t o combine the advantages o f t h e h i g h r e s o l u t i o n c a p a b i l i t i e s o f e l e c t r i c beam p a t t e r n d e l i n e a t i o n w i t h t h e l o w l a t e r a l s p r e a d i n h e r e n t i n t h e implantation process. This talk reviewssome o f t h e g e n e r a l f e a t u r e s o f t h e c h a r a c t e r i s t i c s o f implanted layers i n terms o f d e p t h d i s t r i b u t i o n , r a d i a t i o n damage and e l e c t r o n a c t i v i t y .I m p l a nt a t i o n p r o c e s s e s i n s i l i c o n a r e r e a s o n a b l y w e l l understood. There remain areas which require f u r t h e r c l a r i f i c a t i o n , F o r compound semiconductors, p a r t i c u l a r l y GaAs, implantation techniques offer a t t r a c t i v e p o s s i b i l i t i e s f o r t h e f a b r i c a t i o n of substrate temperature during implantation and t h e high frequency devices. In these materials , t h e d i e l e c t r i c c o a t i n g r e q u i r e d t o p r e v e n t d i s s o c i a t i o n during thermal anneal play major roles.

Depth profiling by secondary ion mass spectrometry

“…Introduction of donors and acceptors into semiconductors in thin layers allows the control of their electrical properties in a large variety of electronic devices. Dopants are either diffused from the surface or implanted from ion beams (Chernow et al 1977, Crowder 1973, Dearnuley et al 1973, Mayer et al 1970, Namba 1975. After implantation annealing is required to restore the perfection of the crystal which has been changed during implantation (radiation damage, amorphization) and to electrically activate the charge carriers.…”

“…After implantation annealing is required to restore the perfection of the crystal which has been changed during implantation (radiation damage, amorphization) and to electrically activate the charge carriers. Implantation distributions can be determined by employing a variety of electrical methods such as Hall effect, differential resistivity, junction depth or capacitance-voltage measurements (Mayer et al 1970). These methods not only use time consuming layer removal but measure only the distribution of the activated implanted atoms.…”

An investigation of the stoichiometry and impurity content of thin silicon oxide films using Rutherford scattering of MeV α-particles

“…Hence, the stoichiometry of a silicon oxide film is given by Two advantages of using Rutherford scattering in place of nuclear reactions are: (i) its relative simplicity (it is not necessary to calculate absolute yields using tabulated cross-section data, since the Rutherford cross sections scale simply wit'h Z $ ) ; 3 ) (ii) a full impurity analysis is also obtained from the one spectrum. The general principles of the technique are described in more detail in references [9] t o [12].…”

New Single Photon Sources by Optoelectronic Tailoring of 2D Materials Using Low Energy Ion Implantation

“…Post-growth doping [6] of TMDCs offers an expanded selection of possible dopants compared to the popular method of doping via CVD growth. The technique allows for highly pure, clean and selective substitutional incorporation of dopants [7] and is also compatible with standard semiconductor processing. Ultra-low energy ion implantation is carried out using the ADONIS mass-selected ion beam deposition system at the University of Gottingen [8].…”