Ion beam synthesis of superconducting MgB2 thin films

Abstract

Superconducting MgB 2 thin films have been fabricated by 80 keV 11 B ion implantation into commercial Mg ribbon with 11 B doses up to 10 18 ions/cm 2 , followed by thermal annealing at 500°C. Temperature dependent dc magnetization measurements confirmed superconducting phase transitions between 11 and 18 K for samples containing nanocrystalline MgB 2 grains embedded in Mg substrate with a small amount of MgO inclusion.

A Potential Integrated Low Temperature Approach for Superconducting<tex>$rm MgB_2$</tex>Thin Film Growth and Electronics Device Fabrication by Ion Implantation

“…The formation of the superconducting phase has been confirmed by Rutherford backscattering spectroscopy (RBS), cross sectional transmission electron microscopy and DC magnetization observations. We reported a low of 15 K previously [10]. Here we demonstrate an improvement in to 21 K by increasing ion implantation fluences, and compare the implantation results with numerical simulations.…”

Superconductivity of Mg–B layers prepared by a multi-energy implantation of boron into magnesium and magnesium into boron bulk substrates followed by the furnace and pulsed plasma annealing

“…The transition temperature T c onset was as high as about 33.6 K. In reference [4,5] B + ions were implanted into the Mg ribbon and the resultant T c after similar annealing was 21 K. These approaches were recently pursuit by our laboratories. The results of preliminary experiments with a single energy ion implantation for both B into Mg and vice versa were encouraging.…”

Effect of film thickness on the transport properties of MgB2 synthesized by spray pyrolysis

“…One such application is Josephson junctions [10][11][12] which have potential use in various applications, such as superconducting quantum interference device (SQUID) [13,14], single flux quantum (SFQ) circuit. To date several methods have been reported mainly hybrid physical chemical vapour deposition (HPCVD) [15][16][17], pulsed laser deposition (PLD) [18,19], electron beam evaporation [20], molecular beam epitaxy [21][22][23], ion beam [24] and sputtering [25,26] for deposition of MgB 2 thin films. Their deposition rate is generally small ($0.1-1.0 nm s À1 ).…”