A Potential Integrated Low Temperature Approach for Superconducting<tex>$rm MgB_2$</tex>Thin Film Growth and Electronics Device Fabrication by Ion Implantation

Abstract

By implanting high fluence B into Mg targets, we demonstrate clearly that superconducting MgB 2 thin films can be formed at a low process temperature. The superconducting transition temperature values observed are dependent on the growth condition. The ion beam synthesis experimental data are discussed and compared with simulation results of the B implantation process in Mg target. We propose that ion beam synthesis of MgB 2 is a potential approach for the mass production of superconducting electronics devices.Index Terms-Ion beam synthesis, MgB 2 , thin films.

Low Temperature STM/STS, Standard AFM and XPS οf Local MgBxPhases

“…Obtaining the good quality thin film of MgB 2 is a great challenge from the application point of view for this superconducting material [6][7][8]. One of the most intriguing problems for this material is its energy gap.…”

Superconductivity of Mg–B layers prepared by a multi-energy implantation of boron into magnesium and magnesium into boron bulk substrates followed by the furnace and pulsed plasma annealing

“…The transition temperature T c onset was as high as about 33.6 K. In reference [4,5] B + ions were implanted into the Mg ribbon and the resultant T c after similar annealing was 21 K. These approaches were recently pursuit by our laboratories. The results of preliminary experiments with a single energy ion implantation for both B into Mg and vice versa were encouraging.…”

The Evolution of Superconducting Phase MgBx

“…After discovery of superconductivity in MgB 2 [1] much of an effort has been taken to obtain good quality thin film material with high T c and high critical current J c [2][3][4]. This paper presents the continuation of our effort to synthesize thin layer of MgB 2 with good superconducting properties by means of a boron ion implantation into magnesium and vice versa [5][6][7][8].…”