Ion beam modification of MoSi multilayer systems for X-ray reflection

Verhoeven, J.; Lu, Chunguang; Puik, E. J.; Wiel, M.J. van der; Huijgen, Tom P.

doi:10.1016/0169-4332(92)90099-j

Cited by 13 publications

(3 citation statements)

References 8 publications

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“…This notably concerns the next generation of optics [1], where ion etching is used to figure a macroscopic Si substrate with sub-nanometer accuracy while the microscopic roughness is maintained at an atomic level [2]. It is furthermore of major importance for the fabrication of multilayer reflective coatings for EUV optics, because the reflectivity of Mo/Si multilayer mirrors is influenced by the ion polishing steps in the manufacturing process [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Roughness evolution of Si surfaces upon Ar ion erosion

Rooij-Lohmann

Кожевников

Peverini

et al. 2010

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Roughness evolution of Si surfaces upon Ar ion erosion

Rooij-Lohmann

Кожевников

Peverini

et al. 2010

Applied Surface Science

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“…Such a morphology, which changes with increasing thickness, has been reported for Cu as early as 1954 9 and later for many other materials, such as Mo 10 and Si. 11 Moreover, in earlier studies, such as Ref.…”

Section: Introductionmentioning

confidence: 96%

Angular and energy dependence of ion bombardment of Mo/Si multilayers

Voorma

Louis

Bijkerk

et al. 1997

Journal of Applied Physics

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The process of ion bombardment is investigated for the fabrication of Mo/Si multilayer x-ray mirrors using e-beam evaporation. The ion treatment is applied immediately after deposition of each of the Si layers to smoothen the layers by removing an additional thickness of the Si layer. In this study the parameters of Kr ϩ ion bombardment have been optimized within the energy range 300 eV-2 keV and an angular range between 20°and 50°. The optical performance of the Mo/Si multilayers is determined by absolute measurements of the near-normal-incidence reflectivity at 14.4 nm wavelength. The multilayer structures are analyzed further with small-angle reflectivity measurements using both specular reflectivity and diffuse x-ray scattering. The optimal smoothening parameters are obtained by determining the effect of ion bombardment on the interface roughness of the Si layer. The optimal conditions are found to be 2 keV at 50°angle of incidence with respect to the surface. These settings result in 47% reflectivity at 85°( ϭ14.4 nm͒ for a 16-period Mo/Si multilayer mirror, corresponding to an interface roughness of 0.21 nm rms. Analysis shows that the interface roughness is determined by ion induced viscous flow, an effect which increases with ion energy as well as angle of incidence. In order to determine the effect of intermixing of the Si and Mo atoms, the penetration depth of the Kr ϩ ions is calculated as a function of ion energy and angle of incidence. Furthermore, the angular dependence of the etch yield, obtained from the in situ reflectivity measurements, is investigated in order o determine the optimal ion beam parameters for the production of multilayer mirrors on curved substrates. © 1997 American Institute of Physics. ͓S0021-8979͑97͒04716-6͔

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“…It is furthermore of major importance for the fabrication of multilayer reflective coatings for EUV optics. The Mo/Si multilayer mirrors with the best reflectivity are obtained when an ion polishing step of the Si layers is included in the manufacturing process [26,29,100].…”

Section: Introductionmentioning

confidence: 99%

Nanoscale diffusion, compound formation and phase transitions in Mo/Si multilayer structures

de Rooij-Lohmann

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Ion beam modification of MoSi multilayer systems for X-ray reflection

Cited by 13 publications

References 8 publications

Roughness evolution of Si surfaces upon Ar ion erosion

Roughness evolution of Si surfaces upon Ar ion erosion

Angular and energy dependence of ion bombardment of Mo/Si multilayers

Nanoscale diffusion, compound formation and phase transitions in Mo/Si multilayer structures

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