The composition and structure of NiAl thin films prepared from Ni/Al were studied. Ni/Al Multilayers of Ni/Al were prepared by sputter deposition on well-polished Si(111) substrates. The average composition was 50 at.% Ni and 50 at.% Al. In order to facilitate migration of particles between layers, two techniques were applied: thermal treatment in hydrogen plasma and ion beam mixing. The composition of the samples was determined by AES, and the structure by extended x-ray absorption fine structure (EXAFS). In the case of thermal treatment, the periodicity of multilayers vanished at ∼800 K, but the structure remained similar to that of the untreated sample. In the case of ion beam mixing, however, the NiAl phase started growing at a temperature of ∼500 K. The concentration of NiAl phase reached ∼85% at ∼580 K and remained constant with further increase of the temperature during ion beam mixing.