“…This includes the capability to describe correctly the electronic and nuclear stopping mechanisms, [1][2][3] damage formation, [4,5] channeling of ions, [6][7][8][9][10][11][12][13][14] sputtering of surfaces [15,16] as well as ion beam mixing at interfaces. [17][18][19][20][21] Many appropriate simulation tools are thus available for ion irradiation of bulk objects and thin films. [22][23][24][25][26] Today, being in an era of nanotechnology, the irradiated object sizes are often comparable to the projected ion range, which led to the discovery of many new effects, as the situation is different to the ion irradiation of bulk or thin films.…”