Ion beam irradiation of nanostructures – A 3D Monte Carlo simulation code

Borschel, Christian; Ronning, Carsten

doi:10.1016/j.nimb.2011.07.004

Cited by 101 publications

(93 citation statements)

References 33 publications

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“…At larger implant energies, the nanowires bent toward the ion incident direction. In Figure 3, the arrows represent the ions incident direction (reported by Borschel et al) [24]. In this case, most of the defects near the ion incident direction were vacancies, and the defects on the other side were almost interstitials.…”

Section: Reviewmentioning

confidence: 90%

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The ion implantation-induced properties of one-dimensional nanomaterials

Xiao

Степанов

et al. 2013

Nanoscale Res Lett

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Nowadays, ion implantation is an extensively used technique for material modification. Using this method, we can tailor the properties of target materials, including morphological, mechanical, electronic, and optical properties. All of these modifications impel nanomaterials to be a more useful application to fabricate more high-performance nanomaterial-based devices. Ion implantation is an accurate and controlled doping method for one-dimensional nanomaterials. In this article, we review recent research on ion implantation-induced effects in one-dimensional nanostructure, such as nanowires, nanotubes, and nanobelts. In addition, the optical property of single cadmium sulfide nanobelt implanted by N+ ions has been researched.

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Section: Reviewmentioning

confidence: 90%

“…Blue, excess interstitials; red, excess vacancies. Reprinted with permission from Borschel et al [24]. …”

Section: Reviewmentioning

confidence: 99%

The ion implantation-induced properties of one-dimensional nanomaterials

Xiao

Степанов

et al. 2013

Nanoscale Res Lett

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“…6,7 The limitations of this approximation are already discussed in the original publication. 20 The accuracy with which Monte Carlo (such as SRIM, 1 iradina, 11 SDTrimSP 21 and TRIDYN 22 ) codes can quantitatively predict sputtering depends on the correct SBE and the correct interaction potential between the atoms and ions within the target, especially at low collision energies. 21 Experimental results comparable to simulations can be obtained.…”

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confidence: 99%

Anomalous Plastic Deformation and Sputtering of Ion Irradiated Silicon Nanowires

et al. 2015

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Silicon nanowires of various diameters were irradiated with 100 keV and 300 keV Ar+ ions on a rotatable and heatable stage. Irradiation at elevated temperatures above 300 °C retains the geometry of the nanostructure and sputtering can be gauged accurately. The diameter dependence of the sputtering shows a maximum if the ion range matches the nanowire diameter, which is in good agreement with Monte Carlo simulations based on binary collisions. Nanowires irradiated at room temperature, however, amorphize and deform plastically. So far, plastic deformation has not been observed in bulk silicon at such low ion energies. The magnitude and direction of the deformation is independent of the ion-beam direction and cannot be explained with mass-transport in a binary collision cascade but only by collective movement of atoms in the collision cascade with the given boundary conditions of a high surface to volume ratio.

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“…The impinging He + ions lose their charge and diffuse out of the lattice and virtually no defects are generated by the light He + ions at this energy [17][18][19] due to strong dynamic annealing in ZnO.…”

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confidence: 99%

Persistent ion beam induced conductivity in zinc oxide nanowires

Johannes

Niepelt

Gnauck

et al. 2011

Applied Physics Letters

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We report persistently increased conduction in ZnO nanowires irradiated by ion beam with various ion energies and species. This effect is shown to be related to the already known persistent photo conduction in ZnO and dubbed persistent ion beam induced conduction. Both effects show similar excitation efficiency, decay rates and chemical sensitivity. Persistent ion beam induced conduction will potentially allow countable (i.e. single dopant) implantation in ZnO nanostructures and other materials showing persistent photo conduction.The one dimensional geometry of nanowires leads to an immense surface to volume ratio and the path of any current through the wire is always close to the surface. Sensing applications [1,2] benefit directly from this pronounced surface influence on electrical characteristics. Metal oxides in general and ZnO thin films in particular have already shown a good ultra-violet (UV) [3] and gas-sensing [4] ability due to the instability of oxygen at the surface [5][6][7]. As the surface influence is increased in nanowires, greatly enhanced sensitivity is expected from nanowire devices [1,6]. Although the conductivity of ZnO can easily be increased by three orders of magnitude by UV excitation, the current only returns to the relaxed value very slowly due to the known Persistant Photo Conduction (PPC) effect [6,[8][9][10].In this work, we report that an analogue Persistant Ion beam induced Conduction (PIC) arises during ion irradiation. PIC may allow single ion detection in individual ZnO nanowires, as well as countable doping with single dopants into ZnO nanowires. The strongly localized energy deposition of a single ion impact can result in a change in the properties of the entire device, providing a localized probe to understand the underlying excitation mechanisms.The typical lifetime of charge carriers in ZnO nanostructures is in the order of 100 ps [11]. To contribute to a persistent current increase, excited charge carriers have to populate distinct, stable states. According to Prades et al. [6] these are surface-oxygen bound states. Further discussion on the origin and properties of PPC can be found in literature [1, 6-10, 12, 13]. For PIC discussed in this work, ions instead of UV photons generate electron hole pairs in the semiconductor. By qualitative comparison we show that PIC and PPC rely on the same mechanism.The ZnO nanowires used for this work were grown via vapor-liquid-solid growth [14][15][16] and have a typical diameter range of 150 to 250 nm. They were imprinted onto the desired substrate by lightly pushing the substrate across the densly covered growth sample. Via photolithography and electron-beam evaporation, Ti/Au 50/50 nm contact pads were defined onto the sparsely * andreas.johannes@uni-jena.de covered substrate. Some wires span the 5 µm space between contact pads (see inset figure 1). Superfluous wires were easily cut with a focused ion beam to reliably manufacture single, contacted nanowires with this randomsuccess method. The nanowire devices were then contacted a...

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Ion beam irradiation of nanostructures – A 3D Monte Carlo simulation code

Cited by 101 publications

References 33 publications

The ion implantation-induced properties of one-dimensional nanomaterials

The ion implantation-induced properties of one-dimensional nanomaterials

Anomalous Plastic Deformation and Sputtering of Ion Irradiated Silicon Nanowires

Persistent ion beam induced conductivity in zinc oxide nanowires

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