Ion-Beam Irradiation Effect in the Growth Process of Graphene on Silicon Carbide-on-Insulator Substrates

Okano, Motochika; Edamoto, Daiki; Uchida, Katsuya; Omura, Ichiro; Ikari, Tomonori; Nakao, Motoi; Naitoh, Masamichi

doi:10.4028/www.scientific.net/msf.778-780.1170

Cited by 2 publications

(2 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…When the thickness of the SiC layer on a SiC-OI substrate was greater than 5 nm, a graphene layer could be grown on the SiC-OI as well as SiC substrate [10]. Thermal decomposition of the SiC(0001) or the SiC(111) surface at high temperatures resulted in the formation of graphene layers on the SiC surface [11]. By contrast, carbon nanotubes (CNTs) could be deposited onto the SiC(0001) or SiC(111) surface [12].…”

Section: Introductionmentioning

confidence: 97%

Growth of Graphene on SiC(111) Surfaces via Ion-Beam Irradiation

Ishii

Miyawaki

Tsuboi

et al. 2016

e-J. Surf. Sci. Nanotech.

Self Cite

View full text Add to dashboard Cite

We used scanning tunneling microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy to investigate the influence of ion-beam irradiation on the growth of graphene on 3C-SiC(111) surfaces via the SiC surface decomposition method. When the SiC(111) surface was irradiated with Ar + ions, the surface bonds of the SiC(111) surfaces were broken. After annealing the SiC surface with an Ar + -ion beam at an accelerating voltage of 1 keV and an incident angle of 70• , we obtained graphene with few defects. However, in the case of Ar + -ion-beam irradiation at 60• , the resulting graphene layers exhibited high defect concentrations. We observed that the Si defect and breakage of bonds in the surface region promotes the formation of graphene layers and that the destruction of the deep layers of SiC substrate prevents the growth of graphene.

show abstract

Section: Introductionmentioning

confidence: 97%

Growth of Graphene on SiC(111) Surfaces via Ion-Beam Irradiation

Ishii

Miyawaki

Tsuboi

et al. 2016

e-J. Surf. Sci. Nanotech.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Naitoh et al 16,17) revealed that the ion-beam irradiation of an SiC surface promotes the growth of graphene or carbon nanotubes (CNTs) via the thermal decomposition of SiC. However, the relation between the effects of ion-beam irradiation and the quality of the formed graphene or CNTs has not been clarified.…”

Section: Introductionmentioning

confidence: 99%

Effect of ion-beam irradiation on the epitaxial growth of graphene via the SiC surface decomposition method

Ishii¹,

Miyawaki²,

Yamasaki³

et al. 2017

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

We used scanning tunneling microscopy, low-energy electron diffraction, and Raman spectroscopy to investigate the growth of graphene on 3C-SiC(111)/SiO2/Si(111) surfaces with ion-beam irradiation via the SiC surface decomposition method. We were unable to obtain graphene after annealing the 3C-SiC(111) surface at 1100 °C for 3 min without Ar+ ion-beam irradiation. When a 3C-SiC(111) surface was irradiated with an Ar+ ion beam at an acceleration voltage of 1 keV and an incident angle of 80° and subsequently annealed at 1100 °C for 3 min, graphene formed on the SiC surface. However, when an Ar+ ion beam was used at an incident angle of 70 or 60°, graphene layers were not formed. These results indicate that the breakage of bonds in the surface region of the SiC(111) substrate by ion-beam irradiation promotes the formation of graphene.

show abstract

Ion-Beam Irradiation Effect in the Growth Process of Graphene on Silicon Carbide-on-Insulator Substrates

Cited by 2 publications

References 14 publications

Growth of Graphene on SiC(111) Surfaces via Ion-Beam Irradiation

Growth of Graphene on SiC(111) Surfaces via Ion-Beam Irradiation

Effect of ion-beam irradiation on the epitaxial growth of graphene via the SiC surface decomposition method

Contact Info

Product

Resources

About