2005
DOI: 10.1016/j.nimb.2004.12.099
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Ion beam erosion of amorphous materials: evolution of surface morphology

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Cited by 61 publications
(42 citation statements)
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“…Although this ripple rotation has been confirmed on various materials like metals [40,61], SiO2 [1,44,60,62], and graphite [36], the formation of ripple patterns oriented parallel to the direction of the ion beam at grazing incidence seems to be suppressed on Si surfaces at room temperature, so that only shallow anisotropic structures have been observed [101,102] that do not resemble the well ordered patterns obtained at elevated sample temperature [5,72]. However, recent experiments by Mollick and Ghose [103] showed that the formation of a clearly developed rotated ripple pattern under 80 incidence can be induced also at room temperature by a chemical pre-roughening of the Si surface which is known to influence the dynamics of the pattern development [45,91].…”
Section: Morphology Of Ion-sputtered Si Surfacesmentioning
confidence: 96%
“…Although this ripple rotation has been confirmed on various materials like metals [40,61], SiO2 [1,44,60,62], and graphite [36], the formation of ripple patterns oriented parallel to the direction of the ion beam at grazing incidence seems to be suppressed on Si surfaces at room temperature, so that only shallow anisotropic structures have been observed [101,102] that do not resemble the well ordered patterns obtained at elevated sample temperature [5,72]. However, recent experiments by Mollick and Ghose [103] showed that the formation of a clearly developed rotated ripple pattern under 80 incidence can be induced also at room temperature by a chemical pre-roughening of the Si surface which is known to influence the dynamics of the pattern development [45,91].…”
Section: Morphology Of Ion-sputtered Si Surfacesmentioning
confidence: 96%
“…A biased tungsten filament (V bias = −13V), providing electrons by thermoionic emission, was placed close to the extraction grid in order to compensate surface charging due to ion implantation. After an ion dose of about 2.8 × 10 19 ionscm −2 , the morphology evolved into a well ordered ripple pattern, which extends uniformly over large areas (∼cm 2 scale) with a wavevector mainly oriented parallel to the ion beam projection on the surface [14].…”
Section: Methodsmentioning
confidence: 99%
“…Low-energy ion beam sputtering (IBS) is a powerful bottom-up technology for generating diverse self-organized nanostructures, such as ripples and dots on different materials including amorphous SiO 2 [1][2][3][4][5][6][7], single crystalline Si [8][9][10][11][12], Ge [10,13] and Ag [14], as well as compound semiconductors GaSb [15] and InP [16]; the IBS technology offers the potential to achieve high throughput and fabrication of large areas [10,[17][18][19]. Ion beam parameters (species, incidence angle, energy, flux, etc) and substrate parameters (material, temperature, initial surface topography, etc) interact to generate the features of such nanopatterns.…”
Section: Introductionmentioning
confidence: 99%