1991
DOI: 10.1016/0920-2307(91)90008-b
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Ion beam assisted thin film deposition

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Cited by 159 publications
(55 citation statements)
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“…It has been found that the Al 2 O 3 layer deposited by the IBAD technique was mostly amorphous and denser than those deposited by other techniques. [23,24] This dense buffer layer may help with the deposition of a more uniform Fe film by increasing the wettability of Fe on its surface, [25] preventing the interdiffusion between the Fe film and the substrate, [18,26] and controlling the formation of catalyst particles during the CNT growth. [27] In order to achieve a high growth rate while maintaining a long catalyst lifetime, we investigated the effect of the temperature on CNT growth rate of arrays.…”
mentioning
confidence: 98%
“…It has been found that the Al 2 O 3 layer deposited by the IBAD technique was mostly amorphous and denser than those deposited by other techniques. [23,24] This dense buffer layer may help with the deposition of a more uniform Fe film by increasing the wettability of Fe on its surface, [25] preventing the interdiffusion between the Fe film and the substrate, [18,26] and controlling the formation of catalyst particles during the CNT growth. [27] In order to achieve a high growth rate while maintaining a long catalyst lifetime, we investigated the effect of the temperature on CNT growth rate of arrays.…”
mentioning
confidence: 98%
“…For reviews, see Smidt 25 and Hirvonen. 26 In this section we consider THDS analysis of Cu thin films ͑200 Å͒ deposited with 250 eV Ar + assistance on poly-Mo at room temperature. Figure 11͑a͒ shows the normalized helium desorption spectra for Ar + /Cu ͑ion/atom͒ deposition ratios as shown for a 100 eV helium implantation fluence of 8.26 ϫ 10 13 He + /cm 2 .…”
Section: G Effect Of Ion Bombardment During Depositionmentioning
confidence: 99%
“…In order to consider specific technological applications as well, we have also applied THDS to Cu films fabricated by 250 eV argon-ion-beam-assisted deposition ͑IBAD͒. 5,6 In earlier work, defects in ion-implanted Cu single crystals have been explored by THDS. 7,8 Some properties of Cu films deposited by IBAD have been reported, [9][10][11] where the substrates were Si, Si/ SiO 2 , SiO 2 , 9,10 and SiN x / SiO 2 -coated Si.…”
Section: Introductionmentioning
confidence: 99%
“…Different properties of grown thin films depend directly on the microstructure of the thin film, which can vary for different deposition methods and deposition parameters, namely, deposition rate, substrate temperature, ratio of ions to neutral atoms and the amount of contamination. Therefore, thin films can be grown with different nano-structures, crystallographic orientations and chemical compositions [8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%