Ion and Atomic Beams for Controlled Fusion and Technology

Gabovich, M. D.; Pleshivtsev, N. V.; Semashko, N. N.

doi:10.1007/978-1-4684-8407-6

Cited by 18 publications

(13 citation statements)

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“…As shown earlier, 8 increasing the fraction of multiply charged ions requires raising the power delivered to the discharge. Also in order to obtain ions of charge n the discharge voltage should be no less than the fivefold value of the ionization potential of an ion of charge n −1.…”

Section: Operational Details and Experimental Resultsmentioning

confidence: 95%

Generation of a boron ion beam in a modified ion source for semiconductor applications

Gushenets

Бугаев

Окс

et al. 2006

Review of Scientific Instruments

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Presented here are results of experimental studies on the production of intense beams of boron ions using a modified Bernas-Calutron ion source. Instead of using the conventional boron-trifluoride gas, a solid lithium-boron-tetrafluoride compound was heated to release boron-trifluoride. For optimum ion source parameters the measured 25-41 mA of total ion beam current was composed of 70% singly charged and about 1% doubly charged boron ions.

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Section: Operational Details and Experimental Resultsmentioning

confidence: 95%

Generation of a boron ion beam in a modified ion source for semiconductor applications

Gushenets

Бугаев

Окс

et al. 2006

Review of Scientific Instruments

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show abstract

“…In contrast to the conventional method of produc tion of fast neutral atom beams due to charge exchange collisions of accelerated ions with a gas tar get and further magnetic separation of accelerated ions that have not yet lost their charges from fast neu tral atoms [10], the method examined in the present work does not require any separation at all. The pro duced beams are composed only of fast neutral parti cles, whereas all positive charges are transmitted by slow ions to the grid surface.…”

Section: Discussionmentioning

confidence: 96%

“…The coefficient of sputtering (for instance, of iron) by argon ions reaches its maximum value at the ion energy ε ~ 10 keV and then diminishes as ε increases further [10]. For this reason, at a constant discharge current and the grid voltage of 10 kV, the reduction in the mean energy of fast argon atoms to ε ~ 500 eV with increasing pressure results in a several fold growth of iron sputtering rate as compared to atoms with a 20 times higher energy ε ~ 10 kV and 20 times lower equivalent current density.…”

Section: Discussionmentioning

confidence: 98%

Beams of fast neutral atoms and molecules in low-pressure gas-discharge plasma

Metel

2012

Plasma Phys. Rep.

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Fast neutral atom and molecule beams have been studied, the beams being produced in a vacuum chamber at nitrogen, argon, or helium pressure of 0.1-10 Pa due to charge exchange collisions of ions accel erated in the sheath between the glow discharge plasma and a negative grid immersed therein. From a flat grid, two broad beams of molecules with continuous distribution of their energy from zero up to e(U + U c ) (where U is voltage between the grid and the vacuum chamber and U c is cathode fall of the discharge) are propagating in opposite directions. The beam propagating from the concave surface of a 0.2 m diameter grid is focused within a 10 mm diameter spot on the target surface. When a 0.2 m diameter 0.2 m high cylindri cal grid covered by end disks and composed of parallel 1.5 mm diameter knitting needles spaced by 4.5 mm is immersed in the plasma, the accelerated ions pass through the gaps between the needles, turn inside the grid into fast atoms or molecules, and escape from the grid through the gaps on its opposite side. The Doppler shift of spectral lines allows for measuring the fast atom energy, which corresponds to the potential difference between the plasma inside the chamber and the plasma produced as a result of charge exchange collisions inside the cylindrical grid.

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“…Any instabilities in a system of ions and accompanying electrons or in a system of ion beam and plasma leading to space charge fluctuations will have the same consequences. It is very likely that such processes are responsible for growth of ion energy spread and emittance of a beam during its transport to a target (Maenchen et al 1986;Lockner et al 1988;Gabovich 1977;Gabovich et al 1986). …”

Section: Introduction: Negative Ion Beamsmentioning

confidence: 98%

Intense negative hydrogen ion production in high-power diodes

Papadichev

1991

Laser Part. Beams

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Some peculiarities of using negative ions for accelerators and CTR are examined. Highpower beams of fast atoms obtained by charge exchange of negative ions can have advantages over positive ion beams for inertial confinement fusion (ICF) since they do not experience any deviations, instabilities, and scattering. H~ current up to 7 kA in a 100-200 ns pulse with densities up to 200 A/cm 2 and a voltage of 0.8 MV were obtained in experiments on magnetically insulated diodes at the Lebedev Physical Institute. Diagnostics of high-power H~ beams are described. Experimental results on cathode plasma formation by surface discharge on a dielectric initiated by a bipolar prepulse or by laser illumination are presented. The dependence of H~ yield on cathode current was determined and experiments on plasma stabilization are described. It is concluded that 1 kA/cm 2 of H~ can be obtained.

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Ion and Atomic Beams for Controlled Fusion and Technology

Cited by 18 publications

References 0 publications

Generation of a boron ion beam in a modified ion source for semiconductor applications

Generation of a boron ion beam in a modified ion source for semiconductor applications

Beams of fast neutral atoms and molecules in low-pressure gas-discharge plasma

Intense negative hydrogen ion production in high-power diodes

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